Applied Materials, Inc.

Lam Research Corporation

Bradley J Howard

Andrew Nguyen

Srinivas D Nemani

Yogananda Sarode Vishwanath

Kenneth S Collins

Shahid Rauf

Sean S Kang

Michael D Willwerth

Nicolas J Bright

Ajit Balakrishna

Eric A Pape

Sumit Agarwal

Mang-Mang Ling

Anand Kumar

Siwen Li

Kartik Ramaswamy

Tom K Cho

Mark Hoinkis

Tom K Choi

Jungmin Ko

Jeremiah T Pender

Jeremiah T P Pender

Chiu-Pien Kuo

Ann Chien

An apparatus for processing a substrate is disclosed and includes, in one embodiment, a twin chamber housing having two openings formed therethrough, a first pump interface member coaxially aligned with one of the two openings formed in the twin chamber housing, and a second pump interface member coaxially aligned with another of the two openings formed in the twin chamber housing, wherein each of the pump interface members include three channels that are concentric with a centerline of the two openings.

Chamber body design architecture for next generation advanced plasma technology

Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.

Apparatus and methods for reducing particles in semiconductor process chambers

Embodiments of the present invention provide methods for patterning a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one embodiment, a method of patterning a metal layer on a substrate includes (a) supplying an etching gas mixture comprising a hydro-carbon gas into a processing chamber having a substrate disposed therein, the substrate having a metal layer disposed thereon, (b) exposing the metal layer to an ashing gas mixture comprising a hydrogen containing gas to the substrate, and (c) repeatedly performing steps (a) and (b) until desired features are formed in the metal layer. During the patterning process, the substrate temperature may be controlled at greater than 50 degrees Celsius.

Methods for etching a metal layer to form an interconnection structure for semiconductor applications

Methods for etching a material layer disposed on the substrate using a combination of a main etching step and a cyclical etching process are provided. The method includes performing a main etching process in a processing chamber to an oxide layer, forming a feature with a first predetermined depth in the oxide layer, performing a treatment process on the substrate by supplying a treatment gas mixture into the processing chamber to treat the etched feature in the oxide layer, performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process further etches the feature to a second predetermined depth, and performing a transition process on the etched substrate by supplying a transition gas mixture into the processing chamber.

Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process

Embodiments of the present disclosure provide methods for etching a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one example, a method of patterning a metal layer on a substrate includes supplying a first etching gas mixture comprising a hydro-carbon gas and a hydrogen containing gas into a processing chamber having a substrate disposed therein, the substrate having a metal layer disposed thereon, supplying a second gas mixture comprising the hydrogen containing gas to a surface of the etched metal layer disposed on the substrate, and supplying a third gas mixture comprising an inert gas into the processing chamber to sputter clean the surface of the etched metal layer.

Methods for cyclically etching a metal layer for an interconnection structure for semiconductor applications

An exemplary semiconductor processing system may include a remote plasma source coupled with a processing chamber having a top plate. An inlet assembly may be used to couple the remote plasma source with the top plate and may include a mounting assembly, which in embodiments may include at least two components. The inlet assembly may further include a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with an injection port.

Semiconductor system assemblies and methods of operation

Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing a treatment process on the substrate having a silicon nitride layer disposed thereon by supplying a treatment gas mixture into the processing chamber to treat the silicon nitride layer, and performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process etches the treated silicon nitride layer.

Methods for etching an etching stop layer utilizing a cyclical etching process

A disclosed device comprises an edge bonding seal configured to be mounted to an edge bead of the electrostatic chuck. The edge bonding seal includes a monitoring layer comprised of a first material configured to emit a species capable of being optically monitored. The edge bonding seal further includes an edge bonding layer configured to be interspersed at least between the monitoring layer and the plasma environment. The edge bonding layer is comprised of a second material susceptible to erosion due to reaction with the plasma environment and configured to expose the monitoring layer to the plasma environment upon sufficient exposure to the plasma environment.

Optical system and methods for monitoring erosion of electrostatic chuck edge bead materials

A disclosed device comprises an edge bonding seal configured to be mounted to an edge bead of the electrostatic chuck. The edge bonding seal includes a monitoring layer comprised of a first material configured to either emit a species capable of being optically monitored or having an electrical resistance value capable of being monitored, or both. The edge bonding seal further includes an edge bonding layer configured to be interspersed at least between the monitoring layer and the plasma environment. The edge bonding layer is comprised of a second material susceptible to erosion due to reaction with the plasma environment and configured to expose the monitoring layer to the plasma environment upon sufficient exposure to the plasma environment.

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Pleasanton, CA, United States of America

Bradley J Howard