Slt Technologies, Inc.

Soraa, Inc.

Bradley C Downey

Mark Philip D'Evelyn

Dirk Ehrentraut

Derrick S Kamber

Wenkan Jiang

Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules

An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.

Large area, low-defect gallium-containing nitride crystals, method of making, and method of use

Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.

Process for large-scale ammonothermal manufacturing of gallium nitride boules

Methods for quantifying extended defects in a gallium-containing nitride crystal, wafer, or device, are disclosed. The methods include providing a gallium-containing nitride crystal, wafer, or device, processing the gallium-containing nitride crystal, wafer, or device in an etchant solution comprising one or more of HPO, HPOthat has been conditioned by prolonged heat treatment to form polyphosphoric acid, and HSO; removing the gallium-containing nitride crystal, wafer, or device from the etchant solution; and quantifying the concentration of at least one of etch pits or etch grooves.

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Santa Barbara, CA, United States of America

Bradley C Downey