Kobe Steel Usa, Inc.

Bradley A Fox

David L Dreifus

Brian Rhys Stoner

Jesko A Von Windheim

Koji Kobashi

Kazushi Hayashi

Takeshi Tachibana

Jeffrey T Glass

Michelle L Hartsell

Luka Lojk

David L Driefus

Robert B Henard

The SAW device comprises a diamond or quartz substrate as a wave propagation layer, a piezoelectric layer on the wave propagation layer and at least one interdigitated electrode on the piezoelectric layer.

Surface acoustic wave and bulk acoustic wave devices using a

An electron beam device includes a diamond layer positioned downstream from and in the path of an electron beam. This diamond layer has a conductance that is responsive to the electron beam. Two electrical contacts on the diamond layer provide connections to a power source and a load. When the electron beam is on, the diamond layer becomes conductive allowing electrical power to flow from the power source through the diamond layer to the load. Accordingly, the electron beam device can act as a switch, or the electron beam can be modulated to provide an amplifier. The diamond layer is capable of high temperature operation, resists crystal damage, resists corrosion, and provides a high breakdown voltage. At least one of the electrical contacts on the diamond layer preferably comprises a degeneratively doped diamond surface portion. The degeneratively doped diamond surface portion is relatively transparent to the electron beam, has a coefficient of thermal expansion that is matched with the diamond layer, and resists damage caused by the electron beam.

Diamond target electron beam device

A semiconductor device for providing stable operation over a relatively wide temperature range includes a wide bandgap semiconductor active region having an intentional dopant of a first conductivity type and an unintentional impurity of a second conductivity type which together produce a free carrier concentration at room temperature. The concentration of the intentional dopant in the active region is preferably less than 1.times.10.sup.16 cm.sup.-3 and the concentration of the unintentional impurity is less than 0.1 times the intentional dopant concentration so that the intentional dopant concentration will be less than 1000 times the free carrier concentration at room temperature. The intentional dopant concentration supplies substantially all the majority free carriers in the active region. The wide bandgap semiconductor active region is preferably diamond, IV-IV carbides, III-V nitrides and phosphides and II-VI selenides, tellurides, oxides and sulfides. By lightly doping the active region to a level below 1.times.10.sup.16 cm.sup.-3, relatively uniform device characteristics can be achieved over a wide temperature range extending from room temperature to 1000 K and above.

Wide bandgap semiconductor device including lightly doped active region

A diamond semiconductor device with a carbide interlayer includes a diamond layer having a semiconducting diamond region of first conductivity type therein and an insulated gate structure on a face of the diamond layer. The relatively thin carbide interfacial layer is provided between the insulated gate structure and the diamond layer in order to inhibit the formation of electrically active defects, such as interface states at the face. By inhibiting the formation of interface states at the face, the carbide interfacial layer suppresses parasitic leakage of charge carriers from the diamond layer to the insulated gate structure. The carbide interfacial layer can be intrinsic silicon carbide or an intrinsic refractory metal carbide (e.g., TiC or WC) or the layer can be of opposite conductivity type to thereby form a P--N heterojunction with the diamond layer. The carbide interfacial layer and the insulated gate structure can be used in a variety of diamond electronic devices such as MIS capacitors, enhancement-mode and buried-channel insulated-gate field effect transistors (IGFETs), surface-channel and buried-channel charge-coupled devices (CCDs), detectors, heterojunction devices, and other related field effect devices. Related fabrication methods are also disclosed.

Diamond semiconductor device with carbide interlayer

A magnetic sensor element using highly-oriented diamond film comprises a magnetic detecting part, at least a pair of main current electrodes for flowing a main current and generating the Hall electromotive force at the magnetic detecting part, and detection electrodes for detecting said Hall electromotive force. Said magnetic detecting part is formed of a highly-oriented diamond film grown by chemical vapor deposition, at least 90% of which consists of either (100) or (111) crystal planes. Between the adjacent crystal planes, the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} which represent the orientation of the crystal planes, satisfy the following relations simultaneously: .vertline..DELTA..alpha..vertline..ltoreq.10.degree., .vertline..DELTA..beta..vertline..ltoreq.10.degree. and .vertline..DELTA..gamma..vertline..ltoreq.10 .degree.. The magnetic sensor element using highly-oriented diamond film has a high heat stability and sufficiently high level of magnetic field sensitivity to be used practically, enabling to expand the surface area and to increase the integration of the element and to measure magnetic field over a wide area and a large space.

Growing community of inventors

Cary, NC, United States of America

Bradley A Fox