USA As Represented by Secretary of the Navy

University of California

Northrop Grumman Systems Corporation

Bradford B Pate

Tatyana I Feygelson

Karl D Hobart

Travis J Anderson

Marko J Tadjer

Albert Epshteyn

Jeffrey W Baldwin

Jeffrey C Owrutsky

Paul A Desario

William Maza

Matthew P Ray

Vanessa Breslin

Andrew D Koehler

John Bradley Boos

Jonathan L Shaw

Vincent Gambin

Joshua D Caldwell

Ioulia Smorchkova

Mark Goorsky

James G Champlain

Doewon Park

Kevin Jensen

Gregory Todd Lewis

Carlos M Hangarter

Rajinder S Sandhu

Byoung-don Kong

Joan E Yater

Jeff McKay

Eugene I Imhoff

Carlos Hangarter

Disclosed is a method of irradiating a composition having water and hydrogen-terminated nanodiamonds with light that generates water-solvated electrons from the nanodiamonds. The method can be used to degrade fluoroalkyl compounds such as perfluorooctane sulfonate.

Nanodiamond reduction photochemistry

A device having: a substrate having a dielectric surface; a gate electrode; a drain electrode; a source electrode having a conductive contact and a two-dimensional material edge; and a dielectric material between the source and the gate. The source is adjacent to the gate. The drain electrode is not laterally between the edge and the gate electrode, and the distance from the drain electrode to the edge is greater than the distance from the gate electrode to the edge. The edge does not contact any other component of the device. The gate, drain, and source are not in electrical contact with each other. There is a line of sight or electron path from the edge to the drain electrode.

Vacuum transistor structure using graphene edge field emitter and screen electrode

An array of through-silicon vias (TSVs) are formed in a silicone substrate. The vias can be tapered such that the diameter of the via at the surface of the substrate is larger than the diameter of the via at its bottom, with the diameter varying continuously along its depth. After the via is formed, it is seeded with a thin layer of nanocrystalline diamond (NCD) particles, and a NCD film is grown on the bottom and along the sidewalls of the via. The presence of the diamond-filled vias provides improved thermal management to semiconductor devices formed on the silicon substrate.

Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates

A device comprising a single crystal diamond substrate with a buried electrically conducting layer with &#x3bc;m square openings spaced apart milled into the diamond by ablating the carbon above wherein the step of ablating uses a diode pumped tripled Nd:YAG laser at 355 nm and wherein the square openings have electrical contacts and wherein the resistance measured between the square openings is dominated by the buried electrically conducting layer and on the order of about 1 k&#x3a9;.

Device with a single crystal diamond substrate with a buried electrically conducting layer

A method for fabricating a semiconductor device, such as a GaN high electron mobility transistor (HEMT) device, including etching a thermal via into a back-side of a semiconductor substrate and depositing a diamond nucleation seed layer across the back-side of the substrate. The method further includes coating the diamond nucleation with a mask layer and removing mask material outside of the thermal via on the planar portions of the back-side of the substrate. The method includes removing portions of the diamond nucleation layer on the planar portions and then removing the remaining portion of the mask material in the thermal via. The method then includes depositing a bulk diamond layer within the thermal via on the remaining portion of the diamond nucleation layer so that diamond only grows in the thermal via and not on the planar portions of the substrate.

Selective deposition of diamond in thermal vias

A method of laser ablation for electrical contact to a buried electrically conducting layer in diamond comprising polishing a single crystal diamond substrate having a first carbon surface, implanting the diamond with a beam of 180 KeV followed by 150 KeV Cions at fluencies of 4&#xd7;10ions/cmand 5&#xd7;10ions/cmrespectively, forming an electrically conducting carbon layer beneath the first carbon surface, and ablating the single crystal diamond which lies between the electrically conducting layer and the first carbon surface.

Laser ablation technique for electrical contact to buried electrically conducting layers in diamond

Growing community of inventors

Arlington, VA, United States of America

Bradford B Pate