Cree Gmbh

Brad Williams

Peter Scott Andrews

Michael T Bruhns

Jeff LaHaye

Matthew Donofrio

David Beardsley Slater, Jr

Shaow B Lin

Pritish Kar

LEDs comprising polysilazane/polysiloxane copolymers and curable compositions containing same are disclosed. Methods of providing thermal and UV degradation resistance to said LED's, as well as increased luminous flux, is provided.

Silazane-containing materials for light emitting diodes

A light emitting device includes an active layer configured to provide light emission due to carrier recombination therein, a surface on the active layer, and an electrically conductive contact structure on the surface. The contact structure includes at least one plated contact layer. The contact structure may include a sublayer that conforms to the surface roughness of the underlying surface, and the plated contact layer may be substantially free of the surface roughness of the underlying surface. The surface of the plated contact layer may be substantially planar and/or otherwise configured to reflect the light emission from the active layer. Related fabrication methods are also discussed.

Light emitting diode (LED) contact structures and process for fabricating the same

A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.

Trench cut light emitting diodes and methods of fabricating same

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Cary, NC, United States of America

Brad Williams