Freescale Semiconductor,inc.

Brad Smith

Robert E Jones

Cindy K Goldberg

The present invention relates to a method and apparatus for conditioning a polishing pad used in chemical mechanical polishing in which a consistent pressing force can be provided between an abrasive conditioning member and the polishing pad. Specifically, a moveable weight member is provided that can be selectively moved along a length of a support arm in the conditioning apparatus. The position of the weight member relative to the position at which the abrasive conditioning member is mounted alters the resultant pressing force in view of the change in moment created. In a particular example, the positioning of the weight member can be automatically controlled using a drive mechanism controlled by a control unit, such as a computer. In a more particular example, the positioning of the weight member can be dynamically controlled if the control unit receives an external feedback upon which its control of the weight member position is based, such as a detected value of the pressing force exerted by the abrasive conditioning member. Finally, if the apparatus is appropriately arranged to permit the weight member to travel to an opposite side of the location at which the support arm is mounted from the abrasive conditioning member, then a 'negative pressing force' can be generated, such that effective pressing forces less than the resting weight of the pad conditioning apparatus can be realized.

Method and apparatus for conditioning a CMP pad

To improve the mechanical strength of a wafer comprising a low-k dielectric layer, the low-k dielectric layer is formed so as to have certain regions of low dielectric constant and the remainder having a higher mechanical strength. The higher-strength regions may have a relatively-higher value of dielectric constant. Selective ultraviolet curing of a dielectric material can be performed so as to expel a porogen from the region(s) desired to have low dielectric constant. A photomask, hardmask, or opaque resist, patterned so as to define the region(s) to have lower dielectric constant, is used to shield the remainder of the dielectric material from the ultraviolet radiation. Alternatively, a layer of dielectric material can be blanket cured to lower its dielectric constant, then non-critical regions thereof can be selectively over-cured whereby to produce regions of increased mechanical strength.

Semiconductor wafer with low-K dielectric layer and process for fabrication thereof

An integrated metal-insulator-metal capacitor is formed so that there is an extension portion of its top plate that does not face any portion of the bottom plate, and an extension portion of its bottom plate that does not face any portion of the top plate. Vias connecting the MIM capacitor plates to conductors in an overlying metallization layer are formed so as to contact the extension portions of the top and bottom plates. Etching of the via holes is simplified because it is permissible for the via holes to punch through the extension portions of the capacitor plates. The bottom plate of the MIM capacitor is inlaid. The top plate of the MIM capacitor may be inlaid.

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Gieres, France

Brad Smith