Mattson Technology, Inc

Other

Sandia Corporation

Brad S Mattson

Kristian E Johnsgard

Stephen E Savas

James McDiarmid

Vladimir J Zeitlin

Stewart K Griffiths

Robert H Nilson

Steven C Selbrede

Martin L Hammond

Ralph Sykes Martin

Ashur J Atanos

Jean-Fran&ccedil;ois Daviet

James A Givens

A plasma reactor and methods for processing semiconductor wafers are described. Gases are introduced into a reactor chamber. An induction coil surrounds the reactor chamber. RF power is applied to the induction coil and is inductively coupled into the reactor chamber causing a plasma to form. A split Faraday shield is interposed between the induction coil and the reactor chamber to substantially block the capacitive coupling of energy into the reactor chamber which may modulate the plasma potential. The configuration of the split Faraday shield may be selected to control the level of modulation of the plasma potential. For etch processes, a separate powered electrode may be used to accelerate ions toward a wafer surface. For isotropic etching processes, charged particles may be filtered from the gas flow, while a neutral activated species passes unimpeded to a wafer surface.

Inductive plasma reactor

A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. A vacuum region is preferably provided between the heated block and the insulating material as well as between the insulating material and the chamber wall. Heat transfer across the vacuum regions is primarily achieved by radiation, while heat transfer through the insulating material is achieved by conduction. The wafer is placed on or near the heated block within the vacuum cavity for heating by conduction and radiation. The rate of heating may be controlled by varying pressure across a range of very low pressures.

System and method for thermal processing of a semiconductor substrate

A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. Insulating walls comprising a reflective material, such as polished tungsten, encapsulated within an inert insulating material such as quartz, may be used to provide insulation. The isothermal nature of the processing region may be enhanced by using multiple layers of insulating walls, actively heated insulating walls or a conductive gas to enhance heat transfer to the semiconductor substrate. A semiconductor substrate may be heated and cooled in stages in the processing system to avoid slip. Proximity, conductive gases and cooling gases may be used to increase or decrease the level of heating in stages.

An improved apparatus and method for thermal processing of semiconductor wafers. The apparatus and method provide the temperature stability and uniformity of a conventional batch furnace as well as the processing speed and reduced time-at-temperature of a lamp-heated rapid thermal processor (RTP). Individual wafers are rapidly inserted into and withdrawn from a furnace cavity held at a nearly constant and isothermal temperature. The speeds of insertion and withdrawal are sufficiently large to limit thermal stresses and thereby reduce or prevent plastic deformation of the wafer as it enters and leaves the furnace. By processing the semiconductor wafer in a substantially isothermal cavity, the wafer temperature and spatial uniformity of the wafer temperature can be ensured by measuring and controlling only temperatures of the cavity walls. Further, peak power requirements are very small compared to lamp-heated RTPs because the cavity temperature is not cycled and the thermal mass of the cavity is relatively large. Increased speeds of insertion and/or removal may also be used with non-isothermal furnaces.

Method and apparatus for thermal processing of semiconductor substrates

A semiconductor substrate processing system and method of using a stable heating source with a large thermal mass relative to conventional lamp heating systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the substrate while reducing the potential of heat loss to the surrounding environment, particularly from the edges of the heat source and substrate. Aspects of the present invention include a dual resistive heater system comprising a base or primary heater, surrounded by a peripheral or edge heater. The impedance of the edge heater may be substantially matched to that of the primary heater such that a single power supply may be used to supply power to both heaters. Both resistive heaters deliver heat to a heated block, and the heaters and heated block are substantially enclosed within an insulated cavity. The walls of the insulated cavity may include multiple layers of insulation, and these layers may be substantially concentrically arranged. The innermost layers may comprise silicon carbide coated graphite; the outer layers may comprise opaque quartz. An embodiment of the invention includes a vacuum spool having a large conduction pathway for exhausting gases from the region of the chamber containing the resistive heaters, and a small conduction pathway for removing gases from other regions of the chamber. Temperature measurement sensors include thermocouples and optical pyrometers, with the advantage that a thermocouple may be used to calibrate an optical pyrometer in situ. An insulating shutter may be used to insulate the port through which substrates are inserted into the insulated and heated cavity. Support posts and gas injectors may include ports for optical pyrometers.

Apparatus and method for thermal processing of semiconductor substrates

A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. Insulating walls comprising a reflective material, such as polished tungsten, encapsulated within an inert insulating material, such as quartz, may be used to provide insulation. The isothermal nature of the processing region may be enhanced by using multiple layers of insulating walls, actively heated insulating walls or a conductive gas to enhance heat transfer to the semiconductor substrate. A semiconductor substrate may be heated and cooled in stages in the processing system to avoid slip. Proximity, conductive gases and cooling gases may be used to increase or decrease the level of heating in stages.

A unique process for the removal of organic polymer photoresist and contaminants from the surface of substrates such as semiconductor wafers is disclosed. The process uses a preferred operating power to pressure ratio (where power is measured in watts per cm.sup.3 of plasma and pressure in torr) of less than about 0.150. Pressures of from 10 to 50 torr, and power input of from 200 to 500 watts per cathode can be used to minimize radiation damage to the substrate, and avoid the necessity of using remotely generated plasmas. Additionally, the process minimizes device contamination by post-strip residues (organic and/or inorganic), since only a deionized water rinse is required. Processing time is also reduced.

Growing community of inventors

Los Gatos, CA, United States of America

Brad S Mattson