Samsung Electronics Co., Ltd.

Brad H Lee

Sang-Woo Lee

Jin-ho Park

Seong-hwee Cheong

Sangwuk Park

Kye Hyun Baek

Seung-Gil Yang

Kyoungsub Shin

Won Seok Jung

Sang Woo Jin

A memory device includes a cell region and a peripheral circuit region adjacent the cell region. A plurality of gate electrode layers and insulating layers are stacked on the substrate in the cell region, and a plurality of circuit devices are in the peripheral circuit region. A first interlayer insulating layer is on the substrate in the peripheral circuit region and covers the plurality of circuit devices, and a second interlayer insulating layer is on the substrate in the cell region and the peripheral circuit region. A blocking layer is on the plurality of circuit devices between the first and second interlayer insulating layers. The blocking layer is on an upper surface, of the first interlayer insulating layer, and a side surface of the blocking layer is covered by the second interlayer insulating layer.

Memory devices including blocking layers

Methods for optimizing a plasma process are provided. The method may include obtaining a measurement spectrum from a plasma reaction in a chamber, calculating a normalized measurement standard and a normalized measurement spectrum of the measurement spectrum, comparing the normalized measurement spectrum with a normalized reference spectrum, and comparing the normalized measurement standard with a normalized reference standard to determine whether to change a process parameter of the plasma process or clean the chamber when the normalized measurement spectrum and the normalized reference spectrum are mismatched.

Methods for optimizing a plasma process

In one embodiment, a nonvolatile memory device can be fabricated by forming first metallic dots on a charge storage film using first source gas, forming substitution dots on the charge storage film on which the first metallic dots are formed and forming second metallic dots using a second source gas.

Method of fabricating nonvolatile memory device

Growing community of inventors

Gyeonggi-do, South Korea

Brad H Lee