Taiwan Semiconductor Manufacturing Comp. Ltd.

Bpin Lo

Chyi-Tsong Ni

Ruei-Hung Jang

Tsui-Ling Yen

The present disclosure relates to a method of forming a deep trench capacitor. In some embodiments, the method may be performed by selectively etching a substrate to form a trench having serrated sidewalls defining a plurality of curved depressions. A dielectric material is formed within the trench. The dielectric material conformally lines the serrated sidewalls. A conductive material is deposited within the trench and is separated from the substrate by the dielectric material. The dielectric material is configured to act as a capacitor dielectric between a first electrode comprising the conductive material and a second electrode arranged within the substrate.

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Taipei, Taiwan

Bpin Lo