Westinghouse Electric Corporation

Northrop Corporation

Boyce T Ahlport

James R Cricchi

An MNOS non-volatile memory circuit, which inhibits the application of a write voltage to a memory cell at times when the write data is the same as the data stored in such cell to prevent saturation of the transistor, includes provision for applying automatically such a write voltage upon the detection of a predetermined weak storage condition in such cell.

Growing community of inventors

Rolling Hills Estates, CA, United States of America

Boyce T Ahlport