Texas Instruments Corporation

Boyang Lin

Jiong-Ping Lu

Wei-Yung Hsu

Ming J Hwang

Takayuki Niuya

Song C Park

An embodiment of the instant invention is a method of oxidizing a first feature (feature and/or feature of FIG. and feature of FIG. ) while leaving a second feature substantially unoxidized (features and of FIG. and features and of FIG. ), the method comprised of subjecting the first and second features to an oxygen-containing gas and a separate hydrogen-containing gas. Preferably, the oxygen-containing gas is comprised of gas selected from the group consisting of O , N O, CO , H O, and any combination thereof, and the hydrogen-containing gas is comprised of H . The first feature is, preferably, comprised of polycrystalline silicon, silicon oxide, or a dielectric material, and the second feature is, preferably, comprised of tungsten.

Selective oxidation for semiconductor device fabrication

An embodiment of the instant invention is a method of fabricating an electronic device formed over a semiconductor substrate and having a conductive feature comprised of tungsten, the method comprising the steps of: forming a nucleation layer over the semiconductor substrate by introducing a combination of WF , H and a plasma; and forming a tungsten layer on the nucleation layer by means of chemical vapor deposition. In an alternative embodiment, an insulating layer is formed on the substrate and situated between the nucleation layer and the substrate. Preferably, this embodiment additionally includes the step of forming a nitrogen-containing layer under the nucleation layer by introducing a combination of WF , N , H , and a plasma. The conductive feature is, preferably, a conductive gate structure, and the insulating layer is, preferably, comprised of: an oxide, a nitride, an insulating material with a dielectric constant substantially higher than that of an oxide, and any combination thereof.

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Richardson, TX, United States of America

Boyang Lin