Tsinghua University

Boyang Li

Zhengming Zhao

Liqiang Yuan

Tian Tan

Chen Wang

Ye Jiang

Kainan Chen

Bochen Shi

Yatao Ling

An IGBT modeling method includes creating piece-wise line functions describing a collector-emitter voltage v, a collector current iand a gate-emitter voltage vof the IGBT during a switching-on transient based on an internal structure of the IGBT and transient processes of the IGBT. The IGBT modeling method further includes creating piece-wise line functions describing the collector-emitter voltage v, the collector current iand the gate-emitter voltage vof the IGBT during a switching-off transient based on the internal structure of the IGBT and the transient processes.

IGBT modeling method and circuit simulation method

A backward discrete state event driven power electronics simulation method includes simulation initialization and a k-th simulation step, k&#x2265;0. The k-th simulation step includes obtaining a system state equation at the k-th step. The k-th simulation step further includes determining alternative quantized values for each of state variables at a k+1-th step. The k-th simulation step further includes setting up a finite state machine to determine quantized values for the state variables at the k+1-th step one by one. The k-th simulation step further includes calculating a vector of derivatives based on the quantized values at the k+1-th step and the system state equation. The k-th simulation further includes determining the time of the k+1-th simulation step based on occurrence times of events.

Backward discrete state event driven power electronics simulation method, power electronics simulation computation apparatus and computer-readable storage medium

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Beijing, China

Boyang Li