Wuhan Memsonics Technologies Co., Ltd.

Bowoon Soon

Yan Liu

Chengliang Sun

Chao Gu

Zhipeng Ding

Binghui Lin

Bangtao Chen

Kunli Zhao

Wenjuan Liu

Bohao Hu

Liyan Siow

Chaoxiang Yang

Qin Ren

Yao Cai

Yang Zou

Weiliang Teo

Tiancheng Luo

A resonator, a filter and a duplexer, which relate to the technical field of resonators. The resonator includes: a substrate, and a lower electrode layer, a piezoelectric layer and an upper electrode layer, which are sequentially formed on the substrate, wherein an acoustic reflection structure is formed on a surface of the substrate that is close to the lower electrode layer, and an overlapping region of the acoustic reflection structure, the lower electrode layer, the piezoelectric layer and the upper electrode layer along a stacking direction forms a resonant region; and in the resonant region, the surface, which is away from the substrate, of at least one of the lower electrode layer, the piezoelectric layer and the upper electrode layer is etched to form an etched region, the depth of the etched region is less than the thickness of an etched layer, and the area of the etched region is less than the area of the resonant region. By means of controlling an etching area ratio of the resonant region to the etched region, the resonator can obtain a plurality of different resonant frequencies on the same wafer without increasing processes.

Resonator, filter and duplexer

This application provides a bulk acoustic wave resonator and a bulk acoustic wave filter, and relates to the technical field of filters. The bulk acoustic wave resonator includes a substrate, and a bottom electrode, a piezoelectric layer, a top electrode which are sequentially stacked on the substrate, and an outline of an orthographic projection of the top electrode on the substrate is formed by four curves which are end-to-end connected. Arc transition is set at a joint of every two adjacent curves, and every two curves arranged in a spaced manner are not parallel. Accordingly, reliability of devices can be effectively improved, meanwhile, parasitic resonance amplitude can be effectively restrained, a Q value is increased, and thus device properties are improved.

Bulk acoustic wave resonator and bulk acoustic wave filter

The present application discloses a piezoelectric micro electrical mechanical system (MEMS) microphone chip and a piezoelectric MEMS microphone, and relates to the technical field of piezoelectric devices. The piezoelectric MEMS microphone chip includes at least one substrate frame and at least one plurality of sound receiving beams arranged on the substrate frame. Each of the sound receiving beams includes a connecting beam and a cantilever beam. The connecting beam and the cantilever beam are staggered on a circumference. One ends of the plurality of sound receiving beams that face a geometric center of the a circumference are fixedly connected to one another in a center defined by the substrate frame, and one end of the connecting beam that is away from the geometric center is fixedly connected to the substrate frame.

Piezoelectric mems microphone chip and piezoelectric mems microphone

The disclosure provides a packaging structure and method of an acoustic device, relating the technical field of semiconductors, including: a substrate and a piezoelectric stack structure located on the substrate, a first organic material layer is disposed on the piezoelectric stack structure, a second organic material layer is disposed on the first organic material layer, the first organic material layer includes a first supporting part and a second supporting part, the second supporting part forms a first acoustic reflection structure, when being transmitted to the first acoustic reflection structure, acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is reduced, and the performance of the acoustic device is improved. The first supporting part is matched with the second organic material layer to form a second acoustic reflection structure, so that when part of acoustic waves are not reflected back by the first acoustic reflection structure and are transmitted to the second acoustic reflection structure, the acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is further reduced, and the performance of the acoustic device is improved.

Packaging structure and method of acoustic device

Growing community of inventors

Singapore, Singapore

Bowoon Soon