Samsung Electronics Co., Ltd.

Bowo Choi

Yoonyoung Choi

Seungjin Kim

Sangjine Park

Hyunjung Lee

Byunghyun Lee

Jinwoo Bae

Youngtak Kim

Byeongjoo Ku

Suji Kim

Jihun Cheon

Jaeuk Shin

Sangjae Park

Hangeol Lee

Hyunsil Hong

Capacitor forming methods may include sequentially forming a first mold layer, a first support material layer, and a second mold layer on a substrate, forming a mask pattern on the second mold layer, forming a recess in the second mold layer, the first support material layer, and the first mold layer using the mask pattern as a mask, forming a lower electrode in the recess, removing the mask pattern by a dry cleaning process, reducing a width of an upper portion of the lower electrode, removing the first mold layer, forming a dielectric layer on a surface of the lower electrode, and forming an upper electrode on the dielectric layer.

Methods of fabricating capacitor and semiconductor device and semiconductor devices and apparatus including the same

A semiconductor device includes a landing pad, a first insulating pattern in contact with a lower portion of a side surface of the landing pad, a pad oxide layer having a lateral portion disposed on a portion of an upper surface of the landing pad and a vertical portion in contact with an upper portion of the side surface of the landing pad, a second insulating pattern in contact with an upper surface of the first insulating pattern and covering the first insulating pattern and the pad oxide layer, and a lower electrode that vertically passes through the second insulating pattern and is in contact with a portion of the upper surface and an upper portion of a side surface of the landing pad.

Semiconductor devices having landing pads

Growing community of inventors

Suwon-si, South Korea

Bowo Choi