Aeluma, Inc.

United States of America As Represented by the Administrator of Nasa

Bowen Song

Jonathan Klamkin

Mark A Stephen

Simone Suran Brunelli

Bei Shi

Joseph Fridlander

Victoria Rosborough

Simone Tommaso Suran Brunelli

A method and device for a photodetector circuit using a near infrared (NIR) compliant substrate. The substrate includes a plurality of v-grooves formed within a front region and at least a first GaAs buffer region, a defect filter layer (DFL), and a second GaAs buffer region formed overlying. The device can also include an overlying wavelength configuring material having a graded region with a plurality of material regions configured in order of concentration with respect to at least a first element concentration, which can be configured for a selected wavelength. Then, photodetector device materials can be formed overlying the wavelength configuring material and can include at least an n-type contact region, an absorber region, a p-type spacer region, and a p-type contact region. These device materials can be configured in an array of photomultiplier (PM) devices, single photon avalanche detector (SPAD) devices, or the like.

Method and device for photodetector circuit with near infrared compliant substrate

A method and device for a sensor using a graded wavelength configuring material. The wavelength configuring material can be configured for a selected wavelength using plurality of material regions of varying elemental concentrations in a continuous or step-wise pattern. The material compositions can include InP, InGaAs, GaAs, GaP, InGaAsP, InAs, InAlAs, InAlGaAs, InGaP, and the like. Further, the interface regions between adjacent material regions can be free from smearing of compositions. These material regions can also form a strained graded region overlying a buffer material and a silicon substrate. An array of photodetector materials can be formed overlying the wavelength configuring material. These materials can include an n-type material, an absorption material, a band transition material, and a p-type material, among others. The resulting device exhibits high performance at the selected wavelength and is characterized by low dislocation density.

Method and device for photosensor using graded wavelength configuring materials

A non-etched gap is introduced along the length of an integrated Bragg grating with etched grooves such that the coupling coefficient, K, of the grating is reduced by the non-etched gap. In this way, multiple grating K values may be defined within a photonic integrated circuit using a single lithography and etch step. Additionally, the non-etched gap width may be varied along the length of a single grating to implement a chirped grating.

Method for integration of variable Bragg grating coupling coefficients

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Bowen Song