Samsung Electronics Co., Ltd.

Seoul National University

Bosung Jeon

Byung-Gook Park

Seunghwan Song

A spiking neural network device comprises at least one NAND cell string including a first NAND cell string that includes a string select transistor and a plurality of nonvolatile memory cells between a bit line and a ground select line, a string control circuit configured to generate a string selection signal to turn on the string select transistor in response to an input spike, a word line decoder configured to generate a word line selection signal for selecting a word line of a plurality of word lines for each of the plurality of nonvolatile memory cells in response to the input spike, a plurality of sensing circuits connected to the bit line, respectively corresponding to the plurality of word lines, each sensing circuit configured to generate an output spike according to a current transmitted through the bit line when a corresponding word line is selected, a plurality of switch transistors, each configured to connect one of the plurality of sensing circuits to the bit line according to a switch selection signal, and a switch decoder configured to generate a switch selection signal in synchronization with the word line selection signal for a selected word line.

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Seoul, South Korea

Bosung Jeon