Samsung Electronics Co., Ltd.

Bosoon Kim

Yongseok Lee

Youngmook Oh

Jeongyun Lee

Wonhyuk Lee

Sangduk Park

Seungchul Oh

Jongsoon Park

InWon Park

A semiconductor device includes a substrate including a boundary region between first and second regions, first active patterns on the first region, second active patterns on the second region, and an isolation insulating pattern on the boundary region between the first and second active patterns. A width of at least some of the first active patterns have different widths. Widths of the second active patterns may be equal to each other. A bottom surface of the isolation insulating pattern includes a first bottom surface adjacent to a corresponding first active pattern, a second bottom surface adjacent to a corresponding second active pattern, and a third bottom surface between the first bottom surface and the second bottom surface. The third bottom surface is located at a different height from those of the first and second bottom surfaces with respect to a bottom surface of the substrate.

Semiconductor devices including an isolation insulating pattern on a boundary region of a substrate and between first active patterns and second active patterns

A semiconductor device includes a device isolation layer provided on a substrate, the device isolation layer defining first and second sub-active patterns, first and second gate electrodes crossing the first and second sub-active patterns, respectively, and an isolation structure provided on the device isolation layer between the first and second sub-active patterns. The first and second sub-active patterns extend in a first direction and are spaced apart from each other in the first direction. The device isolation layer includes a diffusion break region disposed between the first and second sub-active patterns. The isolation structure covers a top surface of the diffusion break region.

Semiconductor device and method of manufacturing the same

Semiconductor devices including an isolation insulating pattern with a first bottom surface, a second bottom surface, and a third bottom surface therebetween, where the third bottom surface has a different height than the first and second bottom surfaces

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Hwaseong-si, South Korea

Bosoon Kim