Samsung Electronics Co., Ltd.

Bosoo Kang

Kihwan Kim

Changjung Kim

Youngsoo Park

Changbum Lee

Seungeon Ahn

Junghyun Lee

Myungjae Lee

Disclosed is a resistive memory device. In the resistive memory device, at least one variable resistance region and at least one switching device may be horizontally apart from each other, rather than being disposed on the same vertical axis. At least one intermediate electrode, which electrically connects the at least one variable resistance region and the at least one switching device, may be between the at least one variable resistance region and the at least one switching device.

Resistive memory device

Provided are a memory device formed using one or more source materials not containing hydrogen as a constituent element and a method of manufacturing the memory device.

Method of manufacturing a memory device

Growing community of inventors

Seoul, South Korea

Bosoo Kang