Veeco Instruments Inc.

Rolith, Inc.

Boris Volf

Mikhail Belousov

Alexander I Gurary

Boris Kobrin

Yuliy Rashkovsky

Igor Landau

A wafer carrier used in wafer treatments such as chemical vapor deposition has pockets for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with locks for restraining wafers against upward movement away from the support surfaces. Constraining the wafers against upward movement limits the effect of wafer distortion on the spacing between the wafer and the floor surfaces, and thus limits the effects of wafer distortion on heat transfer. The carrier may include a main portion and minor portions having higher thermal conductivity than the main portion, the minor portions being disposed below the pockets.

Enhanced wafer carrier

Embodiments of the invention relate to methods and apparatus useful in the nanopatterning of large area substrates, where a rotatable mask is used to image a radiation-sensitive material. Typically the rotatable mask comprises a cylinder. The nanopatterning technique makes use of Near-Field photolithography, where the mask used to pattern the substrate is in contact or close proximity with the substrate. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating cylinder surface comprises metal nano holes or nanoparticles.

Large area nanopatterning method and apparatus

A method for monitoring the curvature of a surface of a body such as a semiconductor wafer () includes directing a beam of light along an impingement axis () onto the surface so that a beam of light () is reflected from the surface at a point of impingement. The position of the reflected beam () is detected in two dimensions (x,y). The body () is moved relative to the impingement axis () in a direction transverse to the impingement axis and the beam-directing and position determining steps are repeated. The curvature of the surface is calculated from the detected positions of the reflected beam in a plurality of repetitions.

Method and apparatus for measuring the curvature of reflective surfaces

A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.

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Hightstown, NJ, United States of America

Boris Volf