Kla-Tencor Technologies Corporation

Boris Simkin

Michael E Adel

Mark Ghinovker

Joel L Seligson

John Charles Robinson

Pavel Izikson

David Tulipman

Vladimir Levinski

Disclosed are apparatus and methods for obtaining and analyzing various unique metrics or 'target diagnostics' from one or more semiconductor overlay targets. In one embodiment, an overlay target is measured to obtain one or both of two specific types of target diagnostic information, systematic error metrics and/or random noise metrics. The systematic error metrics generally quantify asymmetries of the overlay target, while the random noise metrics quantify and/or qualify the spatial noise that is proximate to or associated with the overlay target.

Use of overlay diagnostics for enhanced automatic process control

Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.

Growing community of inventors

Haifa, Israel

Boris Simkin