Gte Laboratories Incorporated

Verizon Laboratories Inc.

Verizon Patent and Licensing Inc.

Level 3 Communications, LLC

Boris S Elman

Daniel J Sandman

Jesse Hefter

Christopher S Velazquez

Paul Melman

Chirravuri Jagannath

Emil S Koteles

David G Kenneson

Craig A Armiento

Mrinal Thakur

Robert J Seymour

Wayne F Sharfin

Andrew Silletti

Henning Gunther Schulzrinne

Sukant K Tripathy

Piotr Boni

Yung-Jui Chen

Gary M Carter

Mario Dagenais

A N Choudhury

Vishal K Singh

A method may include receiving first event information about a first entity; receiving second event information about a second entity different from the first entity; associating the first entity and the second entity based on a user associated with the first entity and the second entity; and deriving presence event information based on the first event information and the second event information.

Derived presence-aware service from associated entities

An apparatus and system for recording and managing conversation data occurring over a wireless network via a wireless communication device includes a data interface that transfers conversation data from the communication device to a storage location and a user interface that allows the user to edit and manage the conversation data. In one embodiment, the communication device includes on-board memory to provide temporary storage of the communication data before it is transferred to a playback device or long-term storage device. The inventive service may include playback and/or editing functions as well as an audio-to-text conversion option.

Automated conversation recording device and service

A graphical user interface and method for customer centric network management. The graphical user interface includes a first view showing text input by a user indicative of customer identification data corresponding to a customer in a network. This data is received by a server connected to the user. The server retrieves stored information corresponding to the customer identification data from a database and provides the stored information and actual circuit path information corresponding to a customer service based on the stored information to the graphical user interface. A second view of the graphical user interface shows the stored information, and a third view shows a graphical representation of a customer path corresponding to the actual circuit path information.

Graphical user interface and method for customer centric network management

A system and method that enables a telecommunications consumer to define groups to be included in a monthly bill, and then periodically generate a bill in accordance with the consumer's specifications. In one embodiment, the invention includes a plurality of portable wireless telephone stations; a plurality of wired telephone stations; a plurality of local exchange carriers (LECs); at least one mobile switching center (MSC) and at least one mobile base antenna tower. Each MSC, LEC and IXC is adapted to operate a program that allows a telecommunications consumer to define groups to be included in a monthly bill, and then periodically generate a bill in accordance with the consumer's specifications.

Call management service

A system and method that enables subscribers to transfer the airtime charge for the sending/receiving wireless telephone station to a toll free call provider to/from whom a wireless toll-free telephone call is placed. A communication network in accordance with the present invention includes a plurality of portable wireless telephone stations; a plurality of wired telephone stations; a plurality of local exchange carriers (LECs); at least one mobile switching center (MSC) a mobile base antenna tower. Each MSC, LEC and IXC is adapted to operate a program that retrieves billing information associated with wireless airtime from a rating system and then compile the information in a billing statement for a toll free call provider.

System and method for billing calls over a wireless network

A method of fabricating a semiconductor heterostructure includes the growth of a quantum well active region that is highly lattice-mismatched relative to a substrate. A buffer layer having a thickness above a critical value is grown on the substrate whereby the stress due to a lattice constant mismatch between the buffer layer and substrate is relieved through the formation of misfit dislocations. A strained superlattice structure is grown on the buffer layer in order to terminate any upwardly-propagating dislocations. An unstrained barrier layer is subsequently grown on the superlattice structure. The fabrication method concludes with the growth of a quantum well structure on the unstrained layer wherein a lattice constant mismatch between the quantum well structure and the unstrained barrier layer is smaller than the lattice constant mismatch between the quantum well structure and the substrate. As a result, only a fraction of the stress due to the large lattice mismatch between the quantum well structure and the substrate is accommodated by coherent strain in the quantum well structure, while the remainder of the stress is relieved through the formation of misfit dislocations spatially separated from the quantum well structure.

Method of fabricating highly lattice mismatched quantum well structures

A method of selectively tuning the bandedge of a semi-conductor heterostructure includes forming a disordered region which is spatially separated from a quantum well active region, and subsequently annealing the heterostructure so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. The tuning is spatially selective when the heterostructure is masked so that exposed portions correspond to regions where bandgap tuning is desirable. The heterostructures of interest are III-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.

Bandgap tuning of semiconductor quantum well structures

A ridge-waveguide laser is fabricated by epitaxially growing a GaAs-based heterostructure, disposing an AlAs etch stop layer on the heterostructure, disposing epitaxial layers on the etch stop layer, and etching the heterostructure to form the laser whereby the etch stop layer prevents further etching into said heterostructure.

Semiconductor laser and method of fabricating same

An IMSM photodetector structure comprises a GaAs substrate, a buffer region grown on the substrate, an optically active absorbing layer of In.sub.0.42 Ga.sub.0.58 As grown on the absorbing layer. The buffer region includes in sequence a first layer of In.sub.0.23 Ga.sub.0.77 As, an In.sub.0.46 Ga.sub.0.54 As/GaAs superlattice, and a second layer of In.sub.0.23 Ga.sub.0.77 As. An interdigitated pattern of Schottky metal contacts is fabricated on the Al.sub.0.3 Ga.sub.0.7 As/GaAs superlattice. This structure is useful in fabricating long-wavelength, monolithic receivers based on GaAs MESFET technology since the optical and electrical characteristics of the structure are preserved during the thermal annealing cycle necesary in ion-implaned GaAs MESFET processes.

Thermally-stable structure for IMSM photodetectors on GaAs substrates

Method of farbicating highly lattice mismatched quantum well structures

An array of bistable devices includes a thin cadmium sulfide platelet having a first portion thereof that is substantially pure and the remaining portion thereof is implanted with atoms that can bind excitons. Such remaining portion can be implanted with ions from a lithium source. Apparatus for providing such an array can include a source of lithium ions and masking means for selectively permitting and for selectively inhibiting passage of ions from the source to pass therethrough and to implant in a pattern onto the platelet. The apparatus operates at temperatures in the neighborhood of liquid helium. A method for producing such an array includes providing a thin, substantially pure, platelet of cadmium sulfide, selectively masking the platelet with a pattern to selectively permit and to selectively inhibit passage of ions onto the platelet, and providing a source of ions. The source of ions, in accordance with certain features, can be lithium ions.

Array of bistable devices and apparatus and methods for creating same

A method of making Y couplers and grating optical waveguides of the present invention comprises exposing the polydiacetylene to an e-beam or a similar exposing means causing a change in the index of refraction of the polydiacetylene. In the case of e-beam exposure, the optical component patent is produced by directly controlling the e-beam which does not require any physical and/or chemical preparation of the polydiacetylene. The depth of penetration of the e-beam is controlled by the scanning rate and intensity of the e-beam. The optical gratings, fabricated by e-beam exposure technique, also inherit nonlinear optical properties which can be utilized in nonlinear optical applications.

Method of making micro-optical components on polydiacetylene optical

An optical waveguide made from a unitary organic film has a polydiacetylene core region and a diacetylene monomer cladding substrate region. The index of refraction of the polydiacetylene core region is greater than the index of refraction of the diacetylene monomer cladding substrate region. The method of fabricating the optical waveguide comprises depositing a diacetylene monomer film on a substrate. The diacetylene monomer film is polymerized by ion beam bombardment to a depth less than the thickness of the film. The depth of the polymerization is controlled by the ion mass and energy of the ion beam applied.

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Newton, MA, United States of America

Boris S Elman