Terahertz Technologies LLC

Magtera, Inc.

Other

Trimble Navigation Limited

Wideband Semiconductors, Inc.

Wideband Semiconductor, Inc.

Boris G Tankhilevich

Yehiel Korenblit

Nicholas J Kirchner

Charles Thomas Thurman

James P Flynn

James M Janky

Michael Timo Allison

Michael D Murphy

David Bruce Isaksen

Valentine L Denninger

Richard John Fagerlund

James Edwin Jones, Jr

Philip R Sanfilippo

An apparatus for generation of tunable terahertz radiation is provided. The apparatus comprises: a plurality of terahertz magnon laser generators, whereas at least one such terahertz magnon laser generator comprises a multilayer column, and a terahertz transparent medium separating at least two such terahertz magnon laser generators. At least one such multilayer column further comprises: a substrate, a bottom electrode coupled with the substrate, a bottom layer coupled with the bottom electrode, a tunnel junction coupled with the bottom layer, a top layer coupled with the tunnel junction, a pinning layer coupled with the spin injector, and a top electrode coupled with the pinning layer.

Terahertz magnon generator comprising plurality of single terahertz magnon lasers

A method for tuning the frequency of THz radiation is provided. The method utilizes an apparatus comprising a spin injector, a tunnel junction coupled to the spin injector, and a ferromagnetic material coupled to the tunnel junction. The ferromagnetic material comprises a Magnon Gain Medium (MGM). The method comprises the step of applying a bias voltage to shift a Fermi level of the spin injector with respect to the Fermi level of the ferromagnetic material to initiate generation of non-equilibrium magnons by injecting minority electrons into the Magnon Gain Medium. The method further comprises the step of tuning a frequency of the generated THz radiation by changing the value of the bias voltage.

Tunable multilayer terahertz magnon generator

An apparatus for novel technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser is provided. The apparatus comprises a terahertz writing head configured to generate a tunable terahertz writing signal and a memory cell including a spacer that comprises a thickness configured based on Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. The memory cell comprises two separate memory states: a first binary state and a second binary state; wherein the first binary memory state corresponds to a ferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a first thickness value of the spacer; and wherein the second binary memory state corresponds to an antiferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a second thickness value of the spacer. The thickness of the spacer is manipulated by the tunable terahertz writing signal.

Technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser

An apparatus for generation of coherent terahertz radiation is provided. In one example, the apparatus includes one or more multilayer tunable microcolumns. In turn, a multilayer tunable microcolumn can include a substrate, a bottom electrode, a bottom layer of a ferromagnetic material further comprising a magnon gain medium (MGM) coupled to the bottom electrode, a tunnel junction coupled to the ferromagnetic material, a spin injector coupled to the tunnel junction, a pinning layer coupled to the spin injector, a reference layer coupled to the pinning layer and a top electrode. In one example, a containment cavity encloses at least one of the multilayer tunable microcolumns. In one example, a storage cavity encloses the containment cavity.

Coherent terahertz magnon laser and coherent terahertz communication system

An apparatus for generation of an ultra-high frequency sound waves with frequencies between (1 GHz-10 GHz) is proposed. The apparatus comprises a spin injector, a tunnel junction, a conductive ferromagnetic material including magnon gain medium, a ferromagnetic dielectric material including magnetic phonon-gain medium, and an ultra-high frequency sound waveguide coupled to the ferromagnetic dielectric material. The spin injector is configured to inject minority non-equilibrium elections into the conductive ferromagnetic material via the tunnel junction. The non-equilibrium magnons generated in the magnon gain medium of the conductive ferromagnetic material propagate into the ferromagnetic dielectric material and having the magnon velocity exceeding the sound velocity in the phonon-gain medium of the ferromagnetic dielectric material cause generation of ultra-high frequency non-equilibrium phonons in the ferromagnetic dielectric material. The ultra-high frequency sound waveguide is configured to output the ultra-high frequency sound generated in the ferromagnetic dielectric material.

Effective generation of ultra-high frequency sound in conductive ferromagnetic material

An apparatus for generating ultra-high frequency sound waves with frequencies between (1 GHz-10 GHz) is proposed. The apparatus comprises a magnetic phonon-gain medium configured to generate high frequency non-equilibrium phonons by non-equilibrium magnons having the magnon velocity exceeding the sound velocity in the magnetic phonon-gain medium. The non-equilibrium magnons having the magnon velocity exceeding the sound velocity in the magnetic phonon-gain medium are generated by injected via a tunnel junction non-equilibrium electrons having spin opposite to the direction of magnetization of the magnetic phonon-gain medium.

Using tunnel junction and bias for effective current injection into magnetic phonon-gain medium

An apparatus comprising a ferromagnetic conductive material including a magnon gain medium (MGM) and a tunnel junction coupled to the ferromagnetic conductive material are provided. The magnon gain medium (MGM) further comprises a conduction band that is split into two sub bands separated by an exchange energy gap, a first sub band having spin up, and a second sub band having spin down. The applied bias voltage is configured to shift the Fermi level of the external metallic contact with respect to the Fermi level of the ferromagnetic conductive material so that the injected electrons are configured to tunnel into the second sub band having spin down.

Using tunnel junction and bias for effective current injection into terahertz magnon

An apparatus for tunable generation of terahertz photons is provided. The apparatus comprises a three level magnon laser, an injection means, a terahertz antenna, and a tuning means. The terahertz antenna further comprises a magnon gain medium that supports generation of nonequilibrium magnons. The magnon gain medium is selected from the group consisting of: a ferromagnetic semiconductor; a dilute magnetic semiconductor (DMS); a half-metallic ferromagnet (HMF); and a ferromagnetic conductor, with a gap in the density of states of the minority electrons around the Fermi energy.

Tunable three level terahertz magnon laser generator with antenna

An apparatus for generating ultra-high frequency sound waves with frequencies between (1 GHz-10 GHz) is proposed. The apparatus comprises a magnetic phonon-gain medium configured to generate high frequency non-equilibrium phonons by non-equilibrium magnons having the magnon velocity exceeding the sound velocity in the magnetic phonon-gain medium. The non-equilibrium magnons having the magnon velocity exceeding the sound velocity in the magnetic phonon-gain medium are generated by injected non-equilibrium electrons having spin opposite to the direction of magnetization of the magnetic phonon-gain medium. The apparatus further comprises a means for outputting the ultra-high frequency non-equilibrium phonons.

Generation of ultra-high frequency sound

A four level magnon laser comprising: a Magnon Gain Medium, wherein the Magnon Gain Medium supports generation of nonequilibrium magnons, and a means for pumping nonequilibrium electrons into Magnon Gain Medium. Propagation of nonequilibrium electrons in Magnon Gain Medium causes generation of nonequilibrium magnons. Magnon Gain Medium comprises ferromagnetic materials at room temperatures including the half-metallic ferromagnets.

Four level magnon laser at room temperatures

An apparatus and method for generating modulated terahertz radiation are provided. The apparatus comprises: (A) a means for generating Terahertz radiation by pumping nonequilibrium electrons into Magnon Gain Medium (MGM); wherein the nonequilibrium electrons emit nonequilibrium magnons, and wherein interaction between nonequilibrium magnons in the Magnon Gain Medium (MGM) causes generation of Terahertz radiation; and (B) a means for modulating the generated Terahertz radiation. The Magnon Gain Medium (MGM) is selected from a magnetic material that supports generation of non-equilibrium magnons at room temperatures. The modulating means further comprises: an AC magnetic field generator, or an AC electric field generator.

Modulation of terahertz radiation at room temperatures

An address locked loop (ALL) apparatus for address recycling is provided. The apparatus comprises a block of memory further comprising a plurality of buffers configured to store a plurality of incoming packets, an address stack configured for storing of a plurality of free addresses, an address locked loop (ALL) control block configured to provide an arbitrated interface with the address stack for filling address requests by a local process and for returning free addresses from the local process to the address stack, and a stack address counter configured to maintain count of the available free addresses remaining on the address stack.

Growing community of inventors

Walnut Creek, CA, United States of America

Boris G Tankhilevich