Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Other

Dolgoshein, Boris Anatolievich

Boris Anatolievich Dolgoshein

Masahiro Teshima

Razmik Mirzoyan

Pavel Zhorzhevich Buzhan

Razmick Mirzoyan

Anatoliy Dmitrievich Pleshko

Stifutkin Alexey Anatolievich

Alexey Anatolievich Stifutkin

Anatoly Pleshko

Sergey Nikolaevich Klemin

Elena Viktorovna Popova

Valentin Nikolaevich Staroseltsev

Leonid Anatolievich Filatov

Vladimir Alexandrovich Kaplin

Elena Viktorovna Osenny Bulvar 10-118 Popova

A silicon-based photoelectric multiplier comprises a plurality of cells and a number of read-out lines, and at least one of a number read-out pads or a ring-like line, wherein the plurality of cells may be divided into a number of segments, and each one of the read-out lines may be electrically connected with the cells of at least one segment.

Silicon photoelectric multiplier with multiple read-out

A cell for a silicon based photoelectric multiplier may comprise a substrate of a second conductivity type, a first layer of a first conductivity type, and/or a second layer of the second conductivity type formed on the first layer. The first layer and the second layer may form a first p-n junction, and the substrate may be configured such that in operation of the photoelectric multiplier from a quantity of light propagating towards a back side or side walls of the photoelectric multiplier, a negligible portion returns to a front side of the photoelectric multiplier.

Silicon photoelectric multiplier with optical cross-talk suppression due to properties of a substrate

A cell for a silicon-based photoelectric multiplier may comprise a first layer of a first conductivity type and a second layer of a second conductivity type formed on the first layer. The first layer and the second layer may form a first p-n junction. The cell may be processed by an ion implantation act wherein parameters of the ion implantation are selected such that due to an implantation-induced damage of the crystal lattice, an absorption length of infrared light of a wavelength in a range of &#x2dc;800 nm to 1000 nm is decreased.

Silicon photoelectric multiplier

The present disclosure relates to photodetectors with high efficiency of light detection, and may be used in a wide field of applications, which employ the detection of very weak and fast optical signals, such as industrial and medical tomography, life science, nuclear, particle, and/or astroparticle physics etc. A highly efficient CMOS-technology compatible Silicon Photoelectric Multiplier may comprise a substrate and a buried layer applied within the substrate. The multiplier may comprise cells with silicon strip-like quenching resistors, made by CMOS-technology, located on top of the substrate and under an insulating layer for respective cells, and separating elements may be disposed between the cells.

Highly efficient CMOS technology compatible silicon photoelectric multiplier

The invention relates to high-efficient light-recording detectors and can be used for nuclear and laser engineering, and in technical and medical tomography etc. The inventive silicon photoelectric multiplier (variant 1) comprising a p++ type conductivity substrate whose dope additive concentration ranges from 10to 10cm &#x2212;and which consists of cells, each of which comprises a p&#x2212; type conductivity epitaxial layer whose dope additive concentration is gradually changeable from 10to 10cmand which is grown on the substrate, a p&#x2212; type conductivity layer whose dope additive concentration ranges from 10to 10cmand a n+ type conductivity layer whose dope additive concentration ranges from 10to 10cm, wherein a polysilicon resistor connecting the n+ type conductivity layer with a feed bar is arranged in each cell on a silicon oxide layer and separating elements are disposed between the cells. Said silicon photoelectric multiplier (variant 2) comprising a n&#x2212; type conductivity substrate to which a p++-type conductivity whose dope additive concentration ranges from 10-10cm&#x2212;is applied and consists of cells, wherein in each cell a polysilicon resistor is placed on a silicon oxide layer and separating elements are disposed between the cells.

Silicon photoelectric multiplier (variants) and a cell for silicon photoelectric multiplier

Growing community of inventors

Moscow, Russia

Boris Anatolievich Dolgoshein