Thomson-csf

Borge Vinter

Emmanuel Rosencher

Philippe Bois

Claude Weisbuch

Armand Tardella

Thierry Weil

Michel Papuchon

Jean-Paul Pocholle

Daniel Kaplan

Dominique Delacourt

Jean Massies

Vincent Berger

Nakita Vodjdani

Julien Nagle

Francedillaois Micheron

Nicolas Grandjean

Gerard Neu

Paul Bois

Didier Lippens

A detector with quantum structure comprising a small-gap semiconductor material inserted between two large-gap semiconductor materials, the structure comprising a coupling grating between the wave to be detected and the detector zone constituted by the small-gap material. Under these conditions, the detector zone may have a very small thickness (typically of the order of 1,000 .ANG.) and lead to a detectivity, limited by the dark current, that is high.

Infrared detector with non-cooled quantum well structure

An electromagnetic wave detector formed of semiconductor materials includes at least one quantum well in which there is provided a fine layer of a material with a gap width that is smaller than that of the quantum well layer. For example, in the case of a GaAlAs/GaAs/GaAlAs, there is provision for a fine layer of InAs. In this way, the difference of energy levels between the two permitted levels is increased and detection of short wavelengths may be accomplished.

Electromagnetic wave detector with quantum well structure

The invention is a resonant tunnel effect quantum well transistor. To improve the gain by avoiding the storage of charges in the well, which consists of layer (14) with a narrow forbidden band and two barriers (13, 15) with a wide forbidden band, the quantum well is laterally bounded--in the plane of the layers--by a depleted region (22) which forms a quantum box whose dimensions are smaller than the De Broglie wavelength. Application to fast electronics (200 GHz).

Resonant tunnel effect quantum well transistor

A semi-conducting structure delimits two quantal wells (CP1, CP2) connected across a barrier layer (CB). The application of an electric field to the structure makes possible the transfer of electrons from one of the wells to the other. The electron-hole pairs are created by a wave-pump, or by the doping of one of the wells. This makes possible, in particular, a dual control by means of the wave-pump and the electric field, thus creating an 'AND'-function modulator.

Electromagnetic wave modulator equipped with coupled quantal wells, and

A quantum well optical device including a layer of semiconducting material of large forbidden band width and, situated in this layer, at least one quantum well, such as a quantum line or quantum hole, of a material having a narrower forbidden band than that of the layer. This quantum well has two permitted electron levels. Means exist of assuring the electron population of the first permitted energy level.

Quantum well optical device

A capacitive detector of electromagnetic waves, comprises three electron levels, wherein an internal barrier prevents a strong coupling between two levels of two neighboring wells. During an irradiation, the electrons are excited from a first level to a second level. The electrons then relax towards a third level until they relax, by tunnel effect, towards the first level. During the transition from the first level towards the third level, a dipole is created. This dipole can be detected by a detector, through the measurement of a potential difference at the terminals of the device.

Capacitive detector of electromagnetic waves

A device for the multiplication of charge carriers of a given type by an avalanche phenomenon includes:

Device for the multiplication of charge carriers by an avalanche

A heterojunction semiconductor device which has a dual channel with a high mobility layer, a barrier layer and a low mobility layer. The barrier layer is thin enough for the carriers to pass from the low mobility layer to the high mobility layer by tunnel effect, during variations of the polarization electrical field of the dual channel. The device can be used as field effect transistors with a quick response time, without variation in the charge of the channel but with a variation in the mobility of the carriers; or as negative transconductance devices for oscillators or complementary transistors in integrated circuits.

Heterojunction and dual channel semiconductor field effect transistor or

An avalanche photodetector of the heterojunction type comprises an intermediate region between two end regions made from distinct semiconductor materials. The intermediate region comprises a lattice of slices of varying thicknesses of alternating layers of the material of the end regions thus forming a system of coupled quantum wells whose thicknesses and whose number of slices are determined so that the response time of the photodetector is less than a maximum given time, while maintaining the number of coupled quantum wells to a minimum.

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Paris, France

Borge Vinter