Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Boram Kim

Jaeyoung Huh

Jonghoon Lim

Ohhyuck Kwon

Daesuk Kang

Kyungwoo Lee

Hongki Moon

Yoonsun Park

Sungchul Park

Jinsu Park

Seungjoo Lee

Seunghoon Kang

Younghwan Park

Youngjin Kim

Jongseob Kim

Jaejoon Oh

Junhyuk Park

Sunkyu Hwang

Joonyong Kim

Soogine Chong

Injun Hwang

Kyungwan Park

Dongchul Shin

Jae-Kwan Seo

Sunwook Heo

Seul-Young Jeong

Jaihoon Kang

Hyun Sook Kim

Seunghwan Lee

Younho Choi

Byeonghoon Park

Woochul Jeon

Sunghoon Moon

Hajoong Yun

Minchul Yu

Woontahk Sung

Jungho Bae

Kihoon Jang

Jungkuk Park

Nosan Park

Jaekwan Seo

Provided are a nitride semiconductor buffer structure and a semiconductor device including the same. The buffer structure may include a plurality of buffer layers between a substrate and an active layer. The active layer may include a nitride semiconductor. The plurality of buffer layers may be stacked on each other on the substrate. Each of the plurality of buffer layers may have a super lattice structure and may include a doped nitride semiconductor. The plurality of buffer layers may have different compositions from each other. Adjacent buffer layers, among the plurality of buffer layers, may have different doping concentrations from each other.

Nitride semiconductor buffer structure and semiconductor device including the same

Disclosed is an electronic device including a housing including a first surface, a second surface facing away the first surface, and a third surface surrounding a space between the first surface and the second surface; a display exposed through the first surface; a battery disposed in the space; a heating source disposed between the battery and the third surface; and a thermal diffusion member disposed between the heating source and the battery. The thermal diffusion member includes a fluid; a first portion disposed adjacent to the heating source for receiving heat from the heating source; and at least one second portion extending from the first portion. The heat transferred from the heating source to the first portion is transferred from the first portion to the at least one second portion.

Electronic device having thermal diffusion structure

An electronic device and method thereof are provided. A method includes, while a wireless communication of a first frequency band is performed via a first 5G antenna, obtaining first status information related to the first 5G antenna and second status information related to a second 5G antenna; if the first status information does not satisfy a first predetermined condition and the second status information satisfies a second predetermined condition, switching from the first 5G antenna to the second 5G antenna, and performing the wireless communication in the first frequency band via the second 5G antenna; and if the first status information does not satisfy the first predetermined condition and the second status information does not satisfy the second predetermined condition, switching from the first 5G antenna to a legacy communication antenna, and performing the wireless communication in a second frequency band via the legacy communication antenna.

Electronic device and antenna switching method thereof

Provided is a high electron mobility transistor including: a channel layer comprising a 2-dimensional electron gas (2DEG); a barrier layer on the channel layer and comprising first regions and a second region, the first regions configured to induce the 2DEG of a first density in portions of the channel layer and the second region configured to induce the 2DEG of a second density different from the first density in other portions of the channel layer; source and drain electrodes on the barrier layer; a depletion formation layer formed on the barrier layer between the source and drain electrodes to form a depletion region in the 2DEG; and a gate electrode on the barrier layer. The first regions may include a first edge region and a second edge region corresponding to both ends of a surface of the gate electrode facing the channel layer.

High electron mobility transistor and method of manufacturing the same

An image sensor includes a substrate having a plurality of pixel regions, a lower layer on the substrate; a plurality of color filters on the lower layer, and a micro-lens layer on or covering top surfaces of the color filters. The micro-lens layer extends to a location between two of the color filters and contacts the lower layer on one of the pixel regions. The color filters are spaced apart from the lower layer.

Image sensor

An electronic device and an antenna switching method of an electronic device are provided. A wireless signal is transmitted or received through a first antenna module among a plurality of antenna modules. A temperature of the first antenna module is measured through a first temperature sensor contained in the first antenna module among a plurality of temperature sensors. A second antenna module among the plurality of antenna modules is switched to based on the measured temperature of the first antenna module exceeding a predetermined value. Each temperature sensor is contained in each of the plurality of antenna modules. The wireless signal is transmitted or received through the second antenna module.

Disclosed is an electronic device having a thermal diffusion structure and including a housing comprising a first surface, a second surface facing the first surface, and a third surface vertical to the first surface and the second surface, a display exposed through at least part of the first surface, a battery arranged between the first surface and the second surface, a heating source arranged between the battery and the third surface in a direction vertical to the first surface and the second surface, and a first thermal diffusion member arranged vertically to the first surface and the second surface, the first thermal diffusion member including a first portion in thermal contact with at least part of the heating source and diffusing heat provided by the heating source to at least one second portion.

Provided is an image sensor including a semiconductor substrate including a first surface and a second surface and a plurality of pixel regions spaced apart, the plurality of pixel regions including a first region including a plurality of image pixels configured to generate image data and a second region including a plurality of phase difference detection pixels configured to perform autofocusing, a first grid pattern including a plurality of groove portions disposed on the second surface, a plurality of first microlenses selectively disposed on bottom surfaces of the plurality of groove portions corresponding to at least one of the first region and the second region, a plurality of color filters filling the plurality of groove portions, respectively, a second grid pattern superimposed on the first grid pattern, and a plurality of second microlenses separated by the second grid pattern and disposed on the plurality of color filters, respectively.

An electronic device including a heat-radiant structure of a camera is provided. The electronic device includes a housing including a front plate, a back plate, an image sensor to receive light through a first region of the back plate, and a laser emitter to emit light through a second region of the back plate, a laser driver, a housing structure surrounding at least a part of a side face of the image sensor and driver, a first metal structure, a first heat transfer member including a first portion, a second portion, and a third portion extended from the second portion to a space between the driver and the front plate, a second heat transfer member extended from the third portion of the first heat transfer member, and a first thermal interface material (TIM) disposed between the second heat transfer member and the front plate.

Electronic device with heat-radiant structure

A high electron mobility transistor (HEMT) includes a channel layer, a plurality of barrier layers, and a p-type semiconductor layer. The barrier layers have an energy band gap greater than that of the channel layer. A gate electrode is arranged on the p-type semiconductor layer. A source electrode and a drain electrode are apart from the p-type semiconductor layer and the gate electrode on the barrier layers. Impurity concentrations of the barrier layers are different from each other in a drift area between the source electrode and the drain electrode.

High electron mobility transistor

An electronic device including: a housing including a frame structure that forms a portion of a surface of the electronic device, a plate structure that is surrounded by the frame structure and that includes a first opening, a metal portion containing a metallic material and a polymer portion containing a polymer material; a support plate that faces the plate structure and that includes a polymer area formed of a polymer material; a printed circuit board that makes contact with part of the metal portion of the housing; a camera module disposed between the polymer portion included in the plate structure and the polymer area included in the support plate, the camera module including a camera bracket, a camera PCB, and a light emitting unit and a light receiving unit; and a heat dissipating structure that transfers heat generated from the camera module to the metal portion included in the housing.

Camera module including heat dissipating structure and electronic device including the same

Methods and devices for antenna switching are provided. A wireless signal is transmitted and received through a specific antenna module among a plurality of antenna modules. Status information about each of one or more other antenna modules among the plurality of antenna modules is acquired, when a temperature of the specific antenna module exceeds a predetermined value. The temperature of the specific antenna module is measured through a respective sensor module of a plurality of sensor modules. Each sensor module of the plurality of sensor modules is contained in or disposed adjacent to a respective antenna module of the plurality of antenna modules. The specific antenna module is switched to an antenna module selected from among the one or more other antenna modules, based on the acquired status information.

Growing community of inventors

Suwon-si, South Korea

Boram Kim