Kopin Corporation

Bor-Yeu Tsaur

John C C Fan

Matthew M Zavracky

Wen-Foo Chern

Rodney J Bumgardner

Alan Richard

Hong K Choi

Hiap L Ong

Jason Lo

Jeffrey Jay Jacobsen

Frederick P Herrmann

Stephen A Pombo

Jagdish Narayan

Ronald P Gale

Tchang-Hun Oh

Shirong Liao

Steve Tchang-Hun Oh

Ron Gale

A compact display module, such as can be used in wearable computing headset applications, includes a microdisplay with a display surface that is virtually imaged by a lens. The lens is positioned to receive light from the display surface of the microdisplay. The lens defines an angled fold, whereby light from a display generated at the display surface is reflected within the lens to thereby form a virtual image of the display in a virtual image plane that is angled non-perpendicularly relative to the display surface of the microdisplay.

Compact folding lens display module

A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.

Display system with single crystal Si thin film transistors

Eyewear viewing device

Display system with single crystal SI thin film transistors

An active matrix color crystal display has an active matrix circuit, a counterelectrode panel and an interposed layer of liquid crystal. The active matrix display is located in a portable microdisplay system that has a display computer that generates images to be displayed on the liquid crystal display and connected to the active matrix liquid crystal display. A data link transmits data at a rate of speed of greater than 200 Mbytes per second in series for at least a portion between the display computer and the active matrix liquid crystal display. In a preferred embodiment, the display system has a randomizing device that alternates the amplifier through which an analog video signal passes.

Portable microdisplay system

A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding pad can be used to attach a bonding wire to the p-electrode in a semiconductor device, such as a light-emitting diode or a laser diode without causing degradation of the light-transmission and ohmic properties of the electrode. The bonding pad may be formed of substantially the same material as an electrode in making an ohmic contact with n-type gallium nitride-based semiconductor material (n-electrode). This allows the bonding pad and the n-electrode to be formed simultaneously when manufacturing a gallium nitride-based light-emitting device which substantially reduces the cost to manufacture the device.

Bonding pad for gallium nitride-based light-emitting device

An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.

Electrode for p-type gallium nitride-based semiconductors

An active matrix color sequential liquid crystal display has an active matrix circuit, a counterelectrode panel and an interposed layer of liquid crystal. The active matrix circuit has an array of transistor circuits formed in a first plane. Each transistor circuit is connected to a pixel electrode in an array of pixel electrodes having a small area. The counterelectrode panel extends in a second plane that is parallel to the first plane, such that the counterelectrode panel receives an applied voltage. The liquid crystal layer is interposed in a cavity between the two planes. In a preferred embodiment, an oxide layer extends over the pixel electrode array. The oxide can have a first thickness in a peripheral region around the array of the pixel electrodes and a thinner second thickness in a pixel electrode region extending over the array of pixel electrodes.

Color display with thin gap liquid crystal

An active matrix color sequential liquid crystal display has an active matrix circuit, a counterelectrode panel and an interposed layer of liquid crystal. The active matrix circuit has an array of transistor circuits formed in a first plane. Each transistor circuit is connected to a pixel electrode in an array of pixel electrodes having a small area. The display is housed in a portable display device having a docking port for a memory card used to input video data for the display.

Portable display system with memory card reader

Growing community of inventors

Lexington, MA, United States of America

Bor-Yeu Tsaur