Other

Chang Gung University

Bor-Ren Fang

Tsung-Yen Tsai

Sung-Jeng Jong

Ray-Ming Lin

Joshua Chiang

Jhong-Hao Jiang

An-Chi Yeh

The present invention relates to a GaN series light-emitting diode structure, which includes a substrate; at least one GaN series layer formed over the substrate; subsequently an interface blocking structure composed of an n-type GaN series superlattice structure and a GaN series light-emitting layer, and a GaN series light-emitting layer are formed over the GaN series layer; and a p-type GaN series layer formed over the GaN series light-emitting layer. In the present invention, the radiative recombination efficiency is improved by introducing an interface blocking structure before the light-emitting layer under the epitaxial conditions of low temperature and pure nitrogen atmosphere.

GaN series light-emitting diode structure

An epoxy/clay nanocomposite suitable for use as matrix material for printed circuit boards is disclosed. The nanocomposite of the present invention comprises a layered clay material uniformly dispersed in an epoxy polymer matrix, wherein the clay material has been modified to an organoclay by ion exchange with (1) benzalkonium chloride and (2) dicyandiamide or tetraethylenepentamine. The epoxy/clay nanocomposites of the present invention have superior dimensional and thermal stability, and a lower hygroscopic property. The invention also includes the prepregs or circuit boards containing the epoxy/clay nanocomposite.

Epoxy/clay nanocomposite for making printed circuit boards

Growing community of inventors

Taipei, Taiwan

Bor-Ren Fang