Uni Light Technology Inc.

Bor-Jen Wu

Chien-An Chen

Nae-Guann Yih

Yuan-Hsiao Chang

Nai-Chuan Chen

Mei-Hui Wu

Yuan-Hsin Tzou

Li-Hsin Kuo

Chin-Hao Hsu

Li-Shei Yeh

Hsiao-Ping Chiu

Wen-Shyh Hsu

A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprises a gas source including a VI Group compound element. The performance of the semiconductor device activated by plasma according to this invention is similar to the performance of the semiconductor device activated by heat in the prior art. Therefore, this invention can provide a method, other then heat, for activating the P-type semiconductor layer of a semiconductor device. Moreover, in this invention, during the activating process by plasma, the layers other than P-type semiconductor layer will not be affected by plasma. That is, the activating process according to this invention will not cause any side-reactions in the layers other than the P-type semiconductor layer of a semiconductor device. Thus, this invention discloses an efficient method for activating a P-type semiconductor layer of a semiconductor structure by plasma instead of heat.

Method for activating P-type semiconductor layer

A method for manufacturing GaN LED devices is disclosed herein. First, a LED epitaxial layer is formed on a provisional substrate. Part of the LED epitaxial layer is removed to form a plurality of LED epitaxial areas. Then, a first transparent conductive layer, a metal reflective layer, and a first metal bonding layer are sequentially formed on the plurality of LED epitaxial areas and then part of the first transparent conductive layer, the metal reflective layer, and the first metal bonding layer are removed. Next, a permanent substrate is provided. At least a metal layer and a second metal bonding layer are formed on the permanent substrate. Then, part of at least the metal layer and the second metal bonding layer are removed. Next, the provisional substrate is bonded to the permanent substrate by aligned wafer bonding method. Then, the provisional substrate is removed to expose a surface of the LED epitaxial layer and then an n-type electrode is formed on the surface. Next, the permanent substrate is cut to form a plurality of LED devices.

Method for manufacturing gallium nitride light emitting diode devices

A method for forming an opto-electronic device through low temperature processes is provided. An active layer is bonded to a substrate by a common adhesive to maintain or increase the luminous efficiency of the opto-electronic because the electric conductive elements of the opto-electronic are formed on the active layer by a solid phase regrowth process through a low temperature processe.

Method for forming an opto-electronic device

An electrode structure for a light-emitting element includes a first electrode and a second electrode. The first electrode has a plurality of first fingers paralleling with each other, a first connective part, and at least a first contact part. Each first finger has a first end and a second end. Pluralities of first ends connect to the first connective part. The first contact part interposes between any first end and the first connective part. The second electrode has a plurality of second fingers paralleling with each other, a second connective part, and at least a second contact part. Each second finger has a third end and a fourth end, and any second finger is between and parallels to any two first fingers. Pluralities of third ends connect to the second connective part. The second contact part interposes between any third end and the second connective part. The second electrode defines a plurality of hexagonal units among a plurality of second ends. Each hexagonal unit shares its four sides to its adjacent hexagonal units, and the four sides include two of the second fingers and the second connective part. Each second end extends to the center of each hexagonal unit.

Electrode structure for a light-emitting element

An LED epitaxial structure and a first electrode layer are formed on a provisional substrate in sequence. Then, a metallic permanent substrate is formed on the first electrode layer, and the provisional substrate is removed to expose a surface of the LED epitaxial structure. A plurality of second electrodes is formed on the surface of the LED epitaxial structure. Finally, the metallic permanent substrate, the first electrode layer, and the LED epitaxial structure are diced to form a plurality of LED devices.

Method for forming an LED device with a metallic substrate

A light emitting diode is made by a compound semiconductor in which light is emitted from an active region with a multiple quantum well structure. The active region is sandwiched by InGaAlP-based lower and upper cladding layers. Emission efficiency of the active region is improved by adding light and electron reflectors in the light emitting diode. These InGaAlP-based layers are grown epitaxially by Organometallic Vapor-Phase Epitaxy (OMVPE) on a GaAs substrate with a misorientation angle toward <111>A to improve the quality and surface morphology of the epilayer and performance in light emitting. The lower cladding layer of first conductivity type forms on a misoriented substrate with the same type of conductivity. Light transparent and current diffusion layers with a second conductivity is formed on top of the upper cladding layer for the spreading of current and expansion of the emission light. These light transparent layers include a barrier layer, a lattice gradient layer, and a window layer with band gaps transparent to the emitting light.

Semiconductor light emitting diode on a misoriented substrate

The present invention provides a method for forming a semiconductor device with a metal substrate. The method includes providing at least one semiconductor substrate; forming at least one semiconductor layer on the semiconductor substrate; forming the metal substrate on the semiconductor substrate and then removing the semiconductor substrate. The metal substrate has advantages of high thermal and electrical conductivity that can improve the reliability and lifetime of the semiconductor device.

Method for forming a semiconductor device having a metal substrate

The present invention provides a method for forming a semiconductor device with a metallic substrate. The method comprises providing a semiconductor substrate. At least a semiconductor layer is formed on the semiconductor substrate. A metallic electrode layer is formed on the semiconductor layer. The metallic substrate is formed on the metallic electrode layer and the semiconductor substrate is removed. The metallic substrate has advantages of high thermal and electrical conductivity, that can improve the reliability and life-time of the semiconductor device.

Method for forming a semiconductor device having a metallic substrate

The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor structure. The second portion is separated from the first portion of the first semiconductor structure. The first contact structure has a first shape. A second semiconductor structure is on the light emitting structure. A transparent contact is on the second semiconductor structure and has a cut-off portion to expose the portion of the second semiconductor structure and a second shape. A second contact structure is on the cut-off portion of the transparent contact. The second contact structure contacting the second semiconductor has a third shape. The second contact structure with the third shape corresponds to both the transparent contact with the second shape and the first contact structure with the first shape whereby a relationship provides a plurality of current paths with substantially equal distances between the first contact structure and the second contact structure.

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Taipei, Taiwan

Bor-Jen Wu