Industrial Technology Research Institute

Au Optronics Corporation

Chunghwa Picture Tubes, Ltd.

Hannstar Display Corporation

Chi Mei Optoelectronics Corporation

Taiwan Tft Lcd Association

Tpo Displays Corporation

Toppoly Optoelectronics Corporation

Quanta Display Inc.

Tpo Dispalys Corp.

Bor-Chuan Chuang

Shin-Chuan Chiang

Hsiang-Yuan Cheng

Chin-Chih Yu

Shih-Hsiang Lai

Chao-Jen Wang

Hua-Chi Cheng

Ming-Nan Hsiao

Chun-Yao Ou

A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.

Thin film transistor with semiconductor precursor and liquid crystal display having the same

A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.

Method of fabricating active layer of thin film transistor

A method of fabricating an active layer thin film by a metal-chalcogenide precursor solution is provided, including the steps of: synthesizing a metal-chalcogenide precursor containing benzyl or benzyl derivative; dissolving the precursor in a solvent to produce a precursor solution, wherein a chalcogen element or compound can be added to the precursor solution to adjust the molar ratio of metal ion to chalcogen; and then applying the precursor solution onto a substrate in a specific coating manner, to form a film of the metal-chalcogenide after a curing process. Thereby, the existing method wherein an amorphous silicon active layer film is fabricated by plasma enhanced chemical vapor deposition (PECVD) is replaced.

Method of fabricating active layer thin film by metal chalcogenide precursor solution

Growing community of inventors

Tainan County, Taiwan

Bor-Chuan Chuang