Washington University

Boqun Dong

Mona Zaghloul

A device employing the generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate (e.g., GaAs, GaSb, InAs, or InGaAs). The device includes two SiO/ZnO islands, each including a SiObuffer layer deposited on the doped p-type III-V semiconductor substrate and a ZnO layer deposited on the SiObuffer layer. An input interdigital transducers (IDT) and an output IDT are each patterned on one of the SiO/ZnO islands. The IDTs generates surface acoustic waves along an exposed surface of the highly doped p-type III-V semiconductor substrate. The surface acoustic waves improve the photoelectric and photovoltaic properties of the device. The device is manufactured using a disclosed technique for propagating strong surface acoustic waves on weak piezoelectric materials. Also disclosed is a photodetector developed using that technique.

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Arlington, VA, United States of America

Boqun Dong