3m Innovative Properties Company

Chartered Semiconductor Manufacturing Ltd (corporation)

Boon Kiat Lim

Alex See

Ranjith Divigalpitiya

Arokiaraj Jesudoss

Gary A Korba

Vincent J Laraia

Melvin T Zin

Article having a first single, discrete atomic, dry layer of a first weakly bonded crystalline material on at least a surface of a substrate. Embodiments of the articles are useful, for example, in automotive under-the-hood parts exposed to chemicals and extreme temperatures.

Article and method of making and using the same

A cathodically-protected pad conditioner for chemical mechanical planarization includes: an abrasive member including a metallic substrate, a support carrier, and an anode affixed to the peripheral edge of the support carrier. A cathodic protection circuit is configured to provide a cathodic protection current from the anode to the abrasive member if contacted with an electrolyte solution. A method of using the cathodically-protected pad conditioner is also disclosed.

Cathodically-protected pad conditioner and method of use

An improved and new process for fabricating self-aligned metal barriers by atomic layer deposition, ALD, capable of producing extremely thin, uniform, and conformal metal barrier films, selectively depositing on copper, not on silicon dioxide interlevel dielectric, in multi-layer dual damascene trench/via processing. Silicon nitride is presently used as a insulating copper barrier. However, silicon nitride has a relatively high dielectric constraint, which deteriorates ICs with increased RC delay. Copper metal barriers of niobium and tantalum have been deposited by atomic layer deposition on copper. With high deposition selectivity, the barrier metal is only deposited over copper, not on silicon dioxide, which eliminates the need of an insulating barrier of silicon nitride.

Method of fabricating self-aligned metal barriers by atomic layer deposition on the copper layer

Growing community of inventors

Singapore, Singapore

Boon Kiat Lim