Samsung Electronics Co., Ltd.

Boo-Hyun Ham

Chang-Hoon Lee

Yong-Kug Bae

Dong-Woon Park

Tae-Hwan Oh

Jong-Su Kim

Tae-Hoi Park

Heeju Shin

Jonghwa Baek

Rankyung Jung

Yongkug Bae

Ja-Min Koo

Hyunchang Lee

In a method of fabricating a semiconductor device, a substrate including a circuit area and an overlay mark area is provided. Conductive gate patterns are formed on the substrate in the circuit area such that the overlay mark area is free of the gate patterns, and conductive contact patterns are formed on the substrate between the gate patterns in the circuit area. A mirror pattern is formed on the substrate in the overlay mark area, where the mirror pattern and the contact patterns comprising a same reflective material. Related semiconductor devices, overlay marks, and fabrication methods are also discussed.

Overlay marks, methods of forming the same, and methods of fabricating semiconductor devices using the same

Provided are a method of forming key patterns and a method of fabricating a semiconductor device using the same. The method of forming key patterns may include forming gate and key patterns on a cell region and a scribe lane region, respectively. Here, the key patterns may be formed to have a large width and a larger pitch than those of the gate patterns.

Method of forming key patterns and method of fabricating a semiconductor device using the same

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Yongin-si, South Korea

Boo-Hyun Ham