Semiconductor Components Industries, LLC

Nextgen Bioscience Co., Ltd.

Bongyong Lee

Thomas Neyer

Kyeongseok Park

Doojin Choi

Kevin Kyuheon Cho

Ki Min Kim

James Joseph Victory

Eunjeong Kim

Bohee Kang

Jeongwoo Yang

Yanghae Park

A power device includes a silicon carbide substrate. A gate is provided on a first side of the silicon carbide substrate. A graded channel includes a first region having a first dopant concentration and a second region having a second dopant concentration, the second dopant concentration being greater than the first dopant concentration.

Power device with graded channel

The present invention relates to a novel salt of 2-amino-2-(2-(1-decyl-1H-1,2,3-triazol-4-yl)ethyl)propane-1,3-diol, and a pharmaceutical composition containing same. In the results of a comparison with hydrochloride salt of 2-amino-2-(2-(1-decyl-1H-1,2,3-triazol-4-yl)ethyl)propane-1,3-diol and the other salts thereof, the novel salt of 2-amino-2-(2-(1-decyl-1H-1,2,3-triazol-4-yl)ethyl)propane-1,3-diol, according to the present invention, exhibits excellent effects in all of low hygroscopicity, standard stock solution stability, photostability, oxidation stability, pH-dependent stability, solubility and the like. The pharmaceutical composition, of the present invention, containing the novel salt as an active ingredient, can be effectively used for preventing or treating multiple sclerosis, ischemic stroke, focal segmental glomerulosclerosis (FSGS), inflammatory bowel disease, interstitial fibrosis and tubular atrophy (IFTA) or alopecia areata (AA).

Salt of 2-amino-2-(2-(1-decyl-1H-1,2,3-triazol-4-yl)ethyl)propane-1,3-diol, and pharmaceutical composition containing same

A SiC MOSFET device with alternating p-well widths, including an undulating channel, is described. The undulating channel provides current paths of multiple widths, which enables optimization of on-resistance, transconductance, threshold voltage, and channel length. The multi-width p-well region further defines corresponding multi-width Junction FETs (JFETs). The multi-width JFETs enable improved response to a short-circuit event. A high breakdown voltage is obtained by distributing a high electric field in a JFET of a first width into a JFET of a second width.

MOSFET device with undulating channel

A power semiconductor device includes a substrate having an edge, an insulating layer disposed over the substrate, a metal layer disposed over the insulating layer and including a first portion and a second portion, a coating layer disposed over the metal layer, and a protective layer covering the substrate, the insulating layer, the metal layer, and the coating layer. The first portion has a first thickness and the second portion has a second thickness that is greater than the first thickness, and the second portion is disposed farther apart from the edge of the substrate than the first portion.

Power device including metal layer

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Seoul, South Korea

Bongyong Lee