Samsung Electronics Co., Ltd.

Bongseob Yang

Daewon Kim

Junggun You

Sungil Park

Jaehoon Shin

Beomjin Park

Bongseok Suh

Jaeyun Lee

Sukhyung Park

A semiconductor device includes a first active region defined on a substrate, a first gate electrode across the first active region, a first drain region in the first active region at a position adjacent to the first gate electrode, an undercut region between the first active region and the first gate electrode, and a first gate spacer on a side surface of the first gate electrode and extending into the undercut region.

Semiconductor devices including gate spacer

Growing community of inventors

Suwon-si, South Korea

Bongseob Yang