Invensense, Inc.

Robert Boschgmbh

Leland Stanford Junior University

Bongsang Kim

Gary O'Brien

Jongwoo Shin

Daesung Lee

Gary Yama

Ashwin K Samarao

Ando Lars Feyh

Logeeswaran Veerayah Jayaraman

Dongyang Kang

Joseph Seeger

Fabian Purkl

Jeff Chunchieh Huang

Peter Smeys

Thomas W Kenny

Thomas Rocznik

Seow Yuen Yee

Andrew Graham

Houri Johari-Galle

Alan Cuthbertson

Chienlu Chang

Manu Agarwal

Saurabh Chandorkar

Renata Melamud

Ando Feyh

Christian Peters

Ralf Maier

Nikhil Apte

Jong Il Shin

Mei-Lin Chan

Leonardo Baldasarre

Michael Baus

Chunchieh Huang

Ian Flader

Jochen Stehle

Mariusz Koc

Nim Hak Tea

Xiaoyue Jiang

Chienliu Chang

Bei Zhu

Emad Mehdizadeh

Matthew A Hopcroft

Wesley James Emmanouel Teskey

Matt Hopcroft

Jong Ii Shin

Ando Feyn

Systems and methods are provided that provide a getter in a micromechanical system. In some embodiments, a microelectromechanical system (MEMS) is bonded to a substrate. The MEMS and the substrate have a first cavity and a second cavity therebetween. A first getter is provided on the substrate in the first cavity and integrated with an electrode. A second getter is provided in the first cavity over a passivation layer on the substrate. In some embodiments, the first cavity is a gyroscope cavity, and the second cavity is an accelerometer cavity.

Systems and methods for providing getters in microelectromechanical systems

A piezoelectric micromachined ultrasound transducer (PMUT) device may include a plurality of layers including a structural layer, a piezoelectric layer, and electrode layers located on opposite sides of the piezoelectric layer. Conductive barrier layers may be located between the piezoelectric layer and the electrodes to the prevent diffusion of the piezoelectric layer into the electrode layers.

Piezoelectric micromachined ultrasound transducer device with piezoelectric barrier layer

A device comprising a micro-electro-mechanical system (MEMS) substrate with protrusions of different heights that has been integrated with a complementary metal-oxide-semiconductor (CMOS) substrate is presented herein. The MEMS substrate comprises defined protrusions of respective distinct heights from a surface of the MEMS substrate, and the MEMS substrate is bonded to the CMOS substrate. In an aspect, the defined protrusions can be formed from the MEMS substrate. In another aspect, the defined protrusions can be deposited on, or attached to, the MEMS substrate. In yet another aspect, the MEMS substrate comprises monocrystalline silicon and/or polysilicon. In yet even another aspect, the defined protrusions comprise respective electrodes of sensors of the device.

Device comprising a micro-electro-mechanical system substrate with protrusions of different heights that has been integrated with a complementary metal-oxide-semiconductor substrate

A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.

3D stack configuration for 6-axis motion sensor

Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.

Actuator layer patterning with topography

Provided herein is an apparatus including a cavity in a first side of a first silicon wafer, and an oxide layer on the first side and in the cavity. A first side of a second silicon wafer is bonded to the first side of the first silicon wafer. A gap control structure is on a second side of the second silicon wafer, and a MEMS structure in the second silicon wafer. A eutectic bond is bonding the second side of the second silicon wafer to a third silicon wafer. A lower cavity is between the second side of the silicon wafer and the third silicon wafer, wherein the gap control structure is outside of the lower cavity and the eutectic bond.

MEMS gap control structures

A device and method for a MEMS device with at least one sensor is disclosed. A thermal element is disposed in the MEMS device to selectively adjust a temperature of the MEMS device. A calibration operation is initiated for the sensor to determine a correction value to be applied to the sensor measurement based on the temperature. The correction value is stored.

Device and method for sensor calibration

Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. A hardmask is deposited on a second side of the device wafer, wherein the second side is planar. The hardmask is etched to form a MEMS device pattern and a standoff pattern. Standoffs are formed on the device wafer, wherein the standoffs are defined by the standoff pattern. A eutectic bond metal is deposited on the standoffs, the device wafer, and the hardmask. A first photoresist is deposited and removed, such that the first photoresist covers the standoffs. The eutectic bond metal is etched using the first photoresist. The MEMS device pattern is etched into the device wafer. The first photoresist and the hardmask are removed.

Selectively controlling application of a self-assembled monolayer (SAM) coating on a substrate of a device is presented herein. A method comprises: forming a material on a first substrate; removing a selected portion of the material from a defined contact area of the first substrate; forming a SAM coating on the material and the defined contact area&#x2014;the SAM coating comprising a first adhesion force with respect to the material and a second adhesion force with respect to the defined contact area, and the first adhesion force being less than the second adhesion force; removing the SAM coating that has been formed on the material; and attaching the first substrate to the second substrate&#x2014;the first substrate being positioned across from the second substrate, and the SAM coating that has been formed on the defined contact area being positioned across from a bump stop of the second substrate.

Selectively controlling application of a self-assembled monolayer coating on a substrate of a device for facilitating a reduction of adverse effects of such coating on the device

A modular deformable electronics platform is attachable to a deformable surface, such as skin. The platform is tolerant to surface deformation and motion, can flex in and out of a plane of the platform without hindering operability of electrical components included on the platform, and is formed via arrangement of discrete flexible tiles, with corners of adjacent tiles connected by a flexible connection material so that individual tiles can translate and rotate relative to each other. Interconnects disposed on bases of separate tiles electrically connect adjacent tiles via their connected corners, and electrically connect components disposed on different tiles. Each pair of adjacent corner connections defines an axis about which at least a portion of the platform can flex without deformation and without hindering connections between tiles. The flexible material and/or bases of the tiles can include Parylene.

Modular deformable platform

A flexible electronic system includes a flexible electronic substrate having a first and second contact pads opposed to each other, one of the first and second contact pads is electrically coupled to a battery. A protective cover is disposed on the flexible electronic substrate. The flexible electronic system further includes a base support fixedly attached to the flexible electronic substrate, the base support having an adhesive surface opposed to the flexible electronic substrate, and a foil having a first portion removably coupled to at least a portion of the adhesive surface and a second portion, wherein the foil configures to permit a removal of the second portion disposed between the first and second contact pads and wherein the removal of the second portion activates the system.

Flexible electronic system

A method includes depositing a silicon layer over a first oxide layer that overlays a first silicon substrate. The method further includes depositing a second oxide layer over the silicon layer to form a composite substrate. The composite substrate is bonded to a second silicon substrate to form a micro-electro-mechanical system (MEMS) substrate. Holes within the second silicon substrate are formed by reaching the second oxide layer of the composite substrate. The method further includes removing a portion of the second oxide layer through the holes to release MEMS features. The MEMS substrate may be bonded to a CMOS substrate.

Proof mass and polysilicon electrode integrated thereon

In one embodiment, a sensor includes a rigid wafer outer body. A first cavity is located within the rigid wafer outer body, and a first vibration isolating spring is supported by the rigid wafer outer body and extends into the first cavity. A second vibration isolating spring is supported by the rigid wafer outer body and extends into the first cavity, and a first sensor packaging is supported by the first vibration isolating spring and the second vibration isolating spring within the first cavity.

Robust inertial sensors

Growing community of inventors

Mountain View, CA, United States of America

Bongsang Kim