Electronics and Telecommunications Research Institute

Bongki Mheen

Jae-Sik Sim

Gyungock Kim

Yong-Hwan Kwon

Hyun-Soo Kim

Eun Soo Nam

Kisoo Kim

Hong-Seok Seo

Jeong-Woo Park

Myoungsook Oh

Gyu Dong Choi

Jin-Yeong Kang

Young-Ahn Leem

Hyun Soo Kim

Jeong Woo Park

Dae Kon Oh

Mi-Ran Park

Jung-Ho Song

Minhyup Song

Dongwoo Suh

Seok-bong Hyun

Dong Woo Suh

Min Hyup Song

Myungsook Oh

Ki-Jun Sung

A LIDAR system is provided. The LIDAR system includes: a light transmitting unit configured to drive a plurality of light emitting elements by light emitting units to irradiate light to different positions of a target object; and a light receiving unit configured to detect light that is reflected at different positions of the target object and then is incident to different light receiving positions through a plurality of light receiving regions.

LIDAR system

A semiconductor laser diode light source package includes: a seed light source for outputting signal beams; a pump beam source for outputting pump beams; and at least one mirror for transmitting the signal beams to a core of an output optical fiber and transmitting the pump beams to first cladding of the output optical fiber, wherein the seed light source, the pump beam source, and the at least one mirror are realized in a semiconductor chip, and the output optical fiber is connected to an end terminal of the semiconductor laser diode light source package.

Semiconductor laser diode light source package

There are provided an optical receiver and a laser radar including the same. The optical receiver includes a plurality of optical detecting units configured to convert an optical signal reflected from a target into an electrical signal and to output the electrical signal, a signal combiner configured to combine output signals of the plurality of light detecting regions, a plurality of switches provided between the plurality of optical detecting units and the signal combiner, and a controller configured to control the plurality of switches so that the plurality of optical detecting units are selectively connected to the signal combiner based on whether the optical signal to reflected from the target is input. Therefore, it is possible to make a module small, to improve stability and reliability, and to reduce a signal to noise ratio.

Optical receiver and laser radar with scan operation

Provided is a laser radar system. The laser radar system includes a first transmission and reception unit sequentially radiating a first laser beam to a plurality of locations within a first view range and receiving a reflected light; and a second transmission and reception unit sequentially radiating a second laser beam to a plurality of locations within a second view range and receiving a reflected light, wherein each of the first transmission and reception unit and the second transmission and reception unit is fixed to a loader and independently searches for the first view range and the second view range.

Laser radar system for obtaining a 3D image

Disclosed are a laser radar system and a method for acquiring an image of a target, and the laser radar system includes: a beam source to emit the laser beam; a beam deflector disposed between the beam source and the target, and configured to deflect the laser beam emitted from the beam source in a scanning direction of the target as time elapses; and an optical detector configured to detect the laser beam reflected from the target, which is provided a plurality of beam spots having a diameter D; and a receiving optical system disposed between the target and the optical detector and configured to converge the laser beam reflected from the target, and the optical detector includes a detecting area having a diameter Dthat satisfies an equation of &#x221a;{square root over (2)}&#xd7;P+2&#xd7;D&#x2266;D&#x2266;2&#xd7;Dand an equation of (4/&#x3c0;)&#xd7;&#x3bb;&#xd7;F_number&#x3c;D&#x3c;D.

Laser radar system and method for acquiring 3-D image of target

Disclosed is a system of a dynamic range three-dimensional image, including: an optical detector including a gain control terminal capable of controlling an optical amplification gain; a pixel detecting module for detecting a pixel signal for configuring an image by receiving an output of the optical detector; a high dynamic range (HDR) generating module for acquiring a dynamic range image by generating a signal indicating a saturation degree of the pixel signal and combining the pixel signal based on the pixel signal detected by the pixel detecting module; and a gain control signal generating module generating an output signal for supplying required voltage to the gain control terminal of the optical detector based on the magnitude of the signal indicating the saturation degree of the pixel signal.

Dynamic range three-dimensional image system

Provided is a photo detector. The photo detector includes: an avalanche photodiode; a bias circuit supplying a bias voltage to one end of the avalanche photodiode; a detection circuit connected to the other end of the avalanche photodiode and detecting a photoelectric current occurring in the avalanche photodiode; and a coupling capacitor connected to the one end or the other end of the avalanche photodiode and supplying a coupling voltage to drive the avalanche photodiode in a Geiger mode.

Photo detector having coupling capacitor

The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.

Avalanche photo diode and method of manufacturing the same

Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.

Photoelectric device using PN diode and silicon integrated circuit (IC) including the photoelectric device

Provided is a method of forming a compound semiconductor device. In the method, a dopant element layer is formed on an undoped compound semiconductor layer. An annealing process is performed to diffuse dopants in the dopant element layer into the undoped compound semiconductor layer, thereby forming a dopant diffusion region. A rapid cooling process is performed using liquid nitrogen with respect to the substrate having the dopant diffusion region.

Methods of forming a compound semiconductor device including a diffusion region

Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has ashape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.

Optical device including gate insulator with modulated thickness

Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.

Optical device having strained buried channel

Provided is an optical device having an edge effect with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities, and has a recessed groove in an upper portion thereof; a gate insulating layer covering the groove and a portion of the first semiconductor layer; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive impurities.

Optical device including gate insulating layer having edge effect

Provided is a high-speed ring optical modulator based on a silicon semiconductor, having increased optical modulation speed. The high-speed ring optical modulator includes a ring optical waveguide including a portion in which the refractive index varies, that is, a refractive index variation portion, and an optical waveguide having a constant refractive index. The refractive index variation portion comprises a bipolar transistor. Thus carriers can be supplied to and discharged from the refractive index variation portion, through which light is transmitted, at high speed, and thus the optical modulation speed can be increased.

Silicon semiconductor based high-speed ring optical modulator

A method for arranging unit inductors of an inductor having metal wiring that can make a full use of self-inductance and mutual-inductance which are determined based on the proportion of the area of an unit inductor and the proportion of the overlapping area with another unit inductor, and an inductor adopting the unit inductor arranging method. The unit inductor arranging method, wherein the inductor includes a first unit inductor, a second inductor and a third inductor, and self-inductance magnitudes of the unit inductors are in the order of the self-inductance of the third inductor&#x3e;the self-inductance of the second inductor&#x3e;the self-inductance of the first inductor, includes the steps of: a) coupling one end of the second unit inductor is connected to one end of the first unit inductor and one end of the third unit inductor to the other end of the first unit inductor in order to arrange the first unit inductor between the second and third unit inductors of which mutual-inductance has the largest value in mutual-inductances between the unit inductors; b) coupling the second unit inductor to a first external terminal; and c) coupling the third unit inductor to a second external terminal.

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Daejeon, South Korea

Bongki Mheen