Samsung Electronics Co., Ltd.

Bonghyun Kim

Daehyun Kim

Sangyeol Kang

Kongsoo Lee

Jun-Noh Lee

Heedon Hwang

Badro Im

Dongkak Lee

KiHong Nam

Yoonchul Cho

JuEun Kim

Carbon-containing patterns are formed on an etch target layer, side surfaces of the carbon-containing patterns are treated by a hydrophilic process, poly-crystalline silicon spacers are formed on the side surfaces of the carbon-containing patterns after the hydrophilic process has been performed, and the etch target layer is patterned using the poly-crystalline silicon spacers as an etch mask.

Methods for manufacturing a semiconductor device

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device comprises a first trench formed in a substrate; a first insulating film formed on sidewalls and a bottom surface of the first trench and not formed on a top surface of the substrate; and a first conductive film formed on the first insulating film to partially fill the first trench, wherein the first insulating film comprises a first portion which overlaps the first conductive film and a second portion which does not overlap the first conductive film, wherein the second portion comprises first fixed charges.

Semiconductor device and method of fabricating the same

Growing community of inventors

Incheon, South Korea

Bonghyun Kim