Canon Kabushiki Kaisha

National Institute of Advanced Industrial Science and Technology

University of Yamanashi

Kyoto University

Tokyo Institute of Technology

Sophia University

Bong-Yeon Lee

Takashi Iijima

Makoto Kubota

Toshihiro Ifuku

Takayuki Watanabe

Nobuhiro Kumada

Satoshi Wada

Kenji Takashima

Hiroshi Funakubo

Yoshitaka Nakamura

Masaki Azuma

Yuichi Shimakawa

Keisuke Yamato

Takanori Matsuda

Hiroshi Uchida

Keisuke Yazawa

Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1):Bi(FeCo)O&#x2003;&#x2003;(1)where 0.95&#x2266;x&#x2266;1.25 and 0&#x2266;y&#x2266;0.30, and a root mean square roughness Rq (nm) of a surface of the piezoelectric material satisfies a relationship of 0&#x3c;Rq&#x2266;25y+2 (0&#x2266;y&#x2266;0.30).

Method of producing piezoelectric device using Be, Fe and Co under excess oxygen atmosphere

Provided is a piezoelectric material having a high Curie temperature and satisfactory piezoelectric characteristics, the piezoelectric material being represented by the following general formula (1):A(ZnTi)MO&#x2003;&#x2003;(1)where A represents a Bi element, M represents at least one element selected from Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value of 0.4&#x2266;x&#x2266;0.6; and y represents a numerical value of 0.17&#x2266;y&#x2266;0.60.

Piezoelectric material

Provided is a piezoelectric material which includes a compound free of lead and alkali metal and has a good piezoelectric property. The piezoelectric material where tungsten bronze structure oxides being free of lead and alkali metal and represented by ABOand A'B&#x2032;Oare combined to form a morphotropic phase boundary has good piezoelectric property. The ABOis b(BaBiNbO)+(1&#x2212;b)(BaAgNbO) (0&#x2266;b&#x2266;1 and 0&#x3c;&#x3b1;&#x2266;0.4), and the A&#x2032;B&#x2032;Ois c(SrNbO)+d(CaNbO)+e(BaNbO) (0&#x2266;c&#x2266;0.8, 0&#x2266;d&#x2266;0.4, 0.1&#x2266;e&#x2266;0.9, and c+d+e=1).

Provided is a piezoelectric material having good piezoelectric properties and a Curie temperature (Tc) of 150&#xb0; C. or higher, and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a sintered body made of a perovskite-type metal oxide represented by the following general formula (1): xBi(MgTi)O-(1-x)BaTiO(1), where x satisfies 0.17&#x2266;x&#x2266;0.8, in which an average grain size of grains contained in the sintered body is 0.5 &#x3bc;m or larger to 10 &#x3bc;m or smaller, and the sintered body is polycrystalline. In addition, the piezoelectric device includes a piezoelectric material and a pair of electrodes disposed in contact with the piezoelectric material, in which the piezoelectric material is the above-mentioned piezoelectric material.

Piezoelectric material, method of manufacturing the same, and piezoelectric device

Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired, and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1):Bi(FeCo)O&#x2003;&#x2003;(1)where 0.95&#x2266;x&#x2266;1.25 and 0&#x2266;y&#x2266;0.30, and a root mean square roughness Rq (nm) of a surface of the piezoelectric material satisfies a relationship of 0&#x3c;Rq&#x2266;25y+2 (0&#x2266;y&#x2266;0.30).

Piezoelectric material, piezoelectric device, and method of producing the piezoelectric device

Provided is a piezoelectric material having good piezoelectric properties and a Curie temperature (Tc) of 150&#xb0; C. or higher, and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a sintered body made of a perovskite-type metal oxide represented by the following general formula (1):Bi(MgTi)O-(1-)BaTiO&#x2003;&#x2003;(1),where x satisfies 0.17&#x2266;x&#x2266;0.8, in which an average grain size of grains contained in the sintered body is 0.5 &#x3bc;m or larger to 10 &#x3bc;m or smaller, and the sintered body is polycrystalline. In addition, the piezoelectric device includes a piezoelectric material and a pair of electrodes disposed in contact with the piezoelectric material, in which the piezoelectric material is the above-mentioned piezoelectric material.

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Tsukuba, Japan

Bong-Yeon Lee