Samsung Display Co., Ltd.

Yonsei University

Ltcam Co., Ltd.

Bong-Yeon Kim

Min Hyuck Kang

Jin-Ho Ju

Jin Ho Ju

Hyun-Joo Lee

Yong Hoon Son

Jun-Hyuk Woo

Hyang-Shik Kong

Hyun Joo Lee

Jeong Won Kim

Jun Hyuk Woo

Jong Kwang Lee

Tae-Gyun Kim

Chul-Won Park

Kyoung Sik Kim

Seok-Ho Lee

Jeong-Won Kim

Dong-Eon Lee

Jong-kwang Lee

Seung Hwa Baek

Jong-Su Han

Seong-Sik Jeon

Jung-Hwan Song

Seung-Hwa Baek

Kyoung-Sik Kim

Hoon Jong Kang

Dong-Min Kim

Tae Gyun Kim

Sang-uk Lim

Seung-Won Park

Moon-Gyu Lee

Seung Bo Shim

Woo-Seok Jeon

Gwui-Hyun Park

Chul Won Park

Tae-Woo Kim

Seung-Bo Shim

Cheol-Kyu Kim

Min Jung Kang

Min-Hyuck Kang

Eun Jeagal

Seon-II Kim

Joo-Kyoung Park

Won-Young Lee

A mask for photolithography includes: a transparent substrate; a phase shift pattern on the transparent substrate and configured to change a phase of light; a dielectric layer on the transparent substrate; and a negative refractive-index meta material layer on the dielectric layer.

Mask for photolithography, method of manufacturing the same and method of manufacturing substrate using the same

A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.

Cleaning composition and method of manufacturing metal wiring using the same

A mask includes a transparent substrate and a light blocking pattern. The light blocking pattern includes a light blocking part and a diffraction pattern. The light blocking part is disposed on the transparent substrate and is configured to block light. The diffraction pattern includes a plurality of protrusion parts and is configured to diffract the light. The plurality of protrusion parts protrudes from a side of the blocking part and is separated from each other.

Mask, method of manufacturing the same, and method of manufacturing a display panel using the same

A method for forming a fine pattern includes forming an etching target material layer on a substrate, forming a first photoresist layer on the etching target material layer, forming a metal pattern on the first photoresist layer, the metal pattern having a plurality of lines and thin film lines alternately arranged, the lines having predetermined linewidth and thickness and are spaced apart from each other by a predetermined distance, exciting surface plasmons in the metal pattern by light irradiation to produce a surface plasmon resonance that exposes a fine first pattern shape in the first photoresist layer, forming a first photoresist pattern by removing the metal pattern and developing the first photoresist layer, and etching the etching target material layer by using the first photoresist pattern as a mask.

Patterning method using surface plasmon

A display device includes a reflective polarizer plate including a first substrate defining an opening area and a non-opening area, and a wire grid polarizer which is disposed on a surface of the first substrate and includes a polarizing part including a plurality of nano wire patterns which is arranged in the opening area to be spaced apart from each other, and a reflecting part including a metal film provided in the non-opening area.

Manufacturing method of reflective polarizer plate and display device including the same

A phase shift device includes a phase shift mask which includes a transparent substrate, and a phase shift pattern which is provided on the transparent substrate, and includes a first area having a first thickness, a second area having a second thickness which is less than the first thickness, a first opening having a first opening width and defined at the first area, and a second opening having a second opening width and defined at the second area.

Phase shift mask, patterning method using the same and method of manufacturing display panel using the same

A pattern mask for patterning a thin film includes a transparent or translucent substrate with a plurality of grooves formed thereon having a pitch of about 4.6 &#x3bc;m to about 10.8 &#x3bc;m.

Pattern mask and method of manufacturing thin film pattern using pattern mask

A photomask for exposure includes: a transparent substrate; a light blocking pattern layer positioned on the transparent substrate; a first dielectric layer positioned on the light blocking pattern layer and including a dielectric material; and a negative refractive index layer positioned on the first dielectric layer and including a metal. A surface plasmon quasi-bound mode of the photomask for exposure overlaps a wavelength range of the light source of the light exposer which irradiates light to the photomask for exposure.

Photomask for exposure and method of manufacturing pattern using the same

A mask may include a circuit area and a pixel area. The circuit area includes a circuit pattern. The pixel area includes a pixel pattern which is extended in a length direction and an assist pattern which is at an end portion of the pixel pattern and adjacent to the circuit area.

Mask having assist pattern

Provided is a photolithography mask capable of forming fine patterns beyond a critical resolution of an exposer without replacing or changing the exposer. The mask includes an at least partially light absorbing phase shift layer and uses a complex wavelength light source.

Mask for exposure and method of fabricating substrate using said mask

An exposure system includes an exposure apparatus and a phase shift mask. The exposure apparatus emits a multi-wavelength light including a plurality of wavelengths different from each other. The phase shift mask includes a transparent substrate and a light blocking layer. The transparent substrate includes a first surface, and a second surface opposite to the first surface. The multi-wavelength light is incident into the first surface. The transparent substrate further includes a recess which extends from the second surface toward the first surface. The light blocking layer includes a first opening which exposes the second surface of the transparent substrate, and a second opening which is spaced apart from the first opening and exposes the recess of the transparent substrate.

Exposure system, method of forming pattern using the same and method of manufacturing display substrate using the same

A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer, a mercaptopropionic acid compound and a solvent. The coating layer is exposed to a light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask.

Photoresist composition and method of forming a metal pattern using the same

Provided are a photomask, including: a substrate; an opaque pattern formed on the substrate and made of a material which does not penetrate light; a first dielectric layer formed on the substrate and the opaque pattern; and a negative refractive-index meta material layer formed on the first dielectric layer, in which a dispersion mode used in the photomask uses a Quasi bound mode, a manufacturing method of the photomask, and a manufacturing method of a substrate using the photomask.

Mask for use in photolithography, manufacturing method thereof and manufacturing method of devices by using the mask

Growing community of inventors

Seoul, South Korea

Bong-Yeon Kim