Samsung Electronics Co., Ltd.

Hyundai Motor Company

Korea Institute of Science and Technology

Bong-Soo Kim

Yoosang Hwang

Hui-Jung Kim

Kiseok Lee

Yoo-Sang Hwang

Jae-Man Yoon

Kang-yoon Lee

Hyeoung-won Seo

Daeik Kim

Hyeongsun Hong

Junsoo Kim

Jemin Park

Seong-goo Kim

Dong-Gun Park

Hyeong-sun Hong

Eunjung Kim

Jiyoung Kim

Keunnam Kim

Satoru Yamada

Ki-Seok Lee

Sung-Hee Han

Sungwoo Kim

Kwan-Sik Cho

Kyupil Lee

Jin-Young Kim

Gwanhyeob Koh

Sunghee Han

Taejin Park

Chan-Sic Yoon

Youngbae Kim

Kyung-Eun Kim

Kijae Hur

Dae-Ik Kim

Eun-Jung Kim

Nam-Gun Kim

Sung-Il Cho

Jae-man Yoon

Dang-Hee Park

Hyun-Chul Yoon

Ki-Hyung Nam

Tae-jin Park

Semyeong Jang

Seung-bae Park

Kwang-youl Chun

Yong-Beom Park

Min Hee Cho

Jin-bum Kim

Dongsoo Woo

Je-min Park

Yong-kwan Kim

Dongoh Kim

Wonsok Lee

Myeong-Dong Lee

Soo-Ho Shin

Augustin Jinwoo Hong

Seokhan Park

Makoto Yoshida

Dong-jin Lee

Dong-Wan Kim

Dongjun Lee

Yun-Gi Kim

Yong-il Kim

Junghoon Han

Sungho Jang

Sohyun Park

Se-Myeong Jang

Sung-Ho Jang

Jaehyoung Choi

Doh-Kwon Lee

Yongkwan Kim

Hoin Lee

Hunkook Lee

Hong-Gon Kim

Kiwook Jung

Young-Woong Son

Choong-Ho Lee

Ji-Young Kim

Youngjun Kim

Chul Ho Lee

Joon Soo Han

Kyung-In Choi

Jun-Hee Lim

Gyo-young Jin

Ki Seok Lee

Hyeon-Woo Jang

Hyeoung-Won Seo

Seok Han Park

Ho-in Ryu

Hyeoungwon Seo

Soo-ho Shin

Jun-Won Lee

Yoo Sang Hwang

Kyu-pil Lee

Jinhyung Park

Hyeran Lee

Sang-Jun Lee

Kang-Yoon Lee

Sung Hee Han

Juhyeon Kim

Ho-Ju Song

Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure on the substrate. The stack structure includes a first insulating material and a second insulating material that is on the first insulating material. The semiconductor device includes a spacer that extends from a sidewall of the first insulating material of the stack structure to a portion of a sidewall of the second insulating material of the stack structure. Moreover, the semiconductor device includes a conductive line that is on the spacer. Methods of forming semiconductor devices are also provided.

Semiconductor devices and methods of forming semiconductor devices

A semiconductor memory device includes a stack structure including a plurality of layers vertically stacked on a substrate. Each of the plurality of layers includes a first dielectric layer, a semiconductor layer, and a second dielectric layer that are sequentially stacked, and a first conductive line in the second dielectric layer and extending in a first direction. The device also includes a second conductive line extending vertically through the stack structure, and a capacitor in the stack structure and spaced apart from the second conductive line. The semiconductor layer includes semiconductor patterns extending in a second direction intersecting the first direction between the first conductive line and the substrate. The second conductive line is between a pair of the semiconductor patterns adjacent to each other in the first direction. An end of each of the semiconductor patterns is electrically connected to a first electrode of the capacitor.

Semiconductor memory devices

Semiconductor memory devices are provided. A semiconductor memory device includes an isolation layer in a first trench and a first gate electrode portion on the isolation layer. The semiconductor memory device includes a second gate electrode portion in a second trench. In some embodiments, the second gate electrode portion is wider, in a direction, than the first gate electrode portion. Moreover, in some embodiments, an upper region of the second trench is spaced apart from the first trench by a greater distance, in the direction, than a lower region of the second trench. Related methods of forming semiconductor memory devices are also provided.

A semiconductor memory device includes word lines extending in a first direction on a semiconductor substrate, bit line structures crossing over the word lines and extending in a second direction intersecting the first direction, and contact pad structures between the word lines and between the bit line structures in plan view. A spacer structure extends between the bit line structures and the contact pad structures. The spacer structure includes a first air gap extending in the second direction along sidewalls of the bit line structures and a second air gap surrounding each of the contact pad structures and coupled to the first air gap.

Semiconductor memory device

A semiconductor memory device may include a substrate, a bit line structure extending in one direction on the substrate, the bit line structure including a sidewall, a storage node contact on the sidewall of the bit line structure, first and second spacers between the sidewall of the bit line structure and the storage node contact, the first spacer separated from the second spacer by a space between the first spacer and the second spacer, an interlayer dielectric layer on the bit line structure, the interlayer dielectric layer including a bottom surface, a spacer capping pattern extending downward from the bottom surface of the interlayer dielectric layer toward the space between the first and second spacers, and a landing pad structure penetrating the interlayer dielectric layer, the landing pad structure coupled to the storage node contact.

Semiconductor memory device and method of fabricating the same

Semiconductor memory devices are provided. A semiconductor memory device includes a substrate. The semiconductor memory device includes a plurality of memory cell transistors vertically stacked on the substrate. The semiconductor memory device includes a first conductive line connected to a source region of at least one of the plurality of memory cell transistors. The semiconductor memory device includes a second conductive line connected to a plurality of gate electrodes of the plurality of memory cell transistors. Moreover, the semiconductor memory device includes a data storage element connected to a drain region of the at least one of the plurality of memory cell transistors.

Semiconductor memory devices may include first and second stacks on a substrate and first and second interconnection lines on the first and second stacks. Each of the first and second stacks may include semiconductor patterns vertically stacked on the substrate, conductive lines connected to the semiconductor patterns, respectively, and a gate electrode that is adjacent to the semiconductor patterns and extends in a vertical direction. The first stack may include a first conductive line and a first gate electrode, and the second stack may include a second conductive line and a second gate electrode. Lower surfaces of the first and second conductive lines may be coplanar. The first interconnection line may be electrically connected to at least one of the first and second conductive lines. The second interconnection line may be electrically connected to at least one of the first and second gate electrodes.

A method of manufacturing a semiconductor memory device and a semiconductor memory device, the method including providing a substrate that includes a cell array region and a peripheral circuit region; forming a mask pattern that covers the cell array region and exposes the peripheral circuit region; growing a semiconductor layer on the peripheral circuit region exposed by the mask pattern such that the semiconductor layer has a different lattice constant from the substrate; forming a buffer layer that covers the cell array region and exposes the semiconductor layer; forming a conductive layer that covers the buffer layer and the semiconductor layer; and patterning the conductive layer to form conductive lines on the cell array region and to form a gate electrode on the peripheral circuit region.

Provided is a semiconductor package including a redistribution substrate, a connection substrate on the redistribution substrate, the connection substrate having an opening that penetrates the connection substrate, a semiconductor chip in the opening of the connection substrate, and a molding layer that covers the semiconductor chip and the connection substrate, and fills a space between the semiconductor chip and the connection substrate, the connection substrate includes a base layer, a plurality of vias that vertically penetrate the base layer, a plurality of first patterns on a top surface of the base layer and connected to the plurality of vias, and a plurality of second patterns on a bottom surface of the base layer and connected to the plurality of vias, an extension of the molding layer extends into a plurality of holes that are spaced apart from the plurality of vias and are formed to vertically penetrate the base layer.

Semiconductor package and method of fabricating the same

A semiconductor memory device comprises a stack structure including a plurality of layers vertically stacked on a substrate. Each of the plurality of layers includes a first dielectric layer, a semiconductor layer, and a second dielectric layer that are sequentially stacked, and a first conductive line in the second dielectric layer and extending in a first direction. The device also comprises a second conductive line extending vertically through the stack structure, and a capacitor in the stack structure and spaced apart from the second conductive line. The semiconductor layer comprises semiconductor patterns extending in a second direction intersecting the first direction between the first conductive line and the substrate. The second conductive line is between a pair of the semiconductor patterns adjacent to each other in the first direction. An end of each of the semiconductor patterns is electrically connected to a first electrode of the capacitor.

A device includes a substrate, a first electrode on the substrate, an insulating pattern on the substrate, a second electrode on an upper end of the insulating pattern, a two-dimensional (2D) material layer on a side surface of the insulating pattern, a gate insulating layer covering the 2D material layer, and a gate electrode contacting the gate insulting layer. The insulating pattern extends from the first electrode in a direction substantially vertical to the substrate. The 2D material layer includes at least one atomic layer of a 2D material that is substantially parallel to the side surface of the insulating pattern.

Device comprising 2D material

A semiconductor memory device including: a substrate including a cell array region and a boundary region; a first recess region at an upper portion of the substrate in the cell array region; a first bit line extending onto the boundary region and crossing the first recess region; a bit line contact in the first recess region and contacting the first bit line; a second bit line spaced apart from the first recess region and adjacent to the first bit line, the second bit line crossing the cell array region and the boundary region; a cell buried insulation pattern between a side surface of the first bit line contact and an inner wall of the first recess region; and a boundary buried insulation pattern covering sidewalls of the first bit line and the second bit line in the boundary region and including a same material as the cell buried insulation pattern.

Semiconductor memory device and a method of fabricating the same

A semicondcutor memory device may include a substrate, a bit line structure extending in one direction on the substrate, the bit line structure including a sidewall, a storage node contact on the sidewall of the bit line structure, first and second spacers between the sidewall of the bit line structure and the storage node contact, the first spacer separated from the second spacer by a space between the first spacer and the second spacer, an interlayer dielectric layer on the bit line structure, the interlayer dielectric layer including a bottom surface, a spacer capping pattern extending downward from the bottom surface of the interlayer dielectric layer toward the space between the first and second spacers, and a landing pad structure penetrating the interlayer dielectric layer, the landing pad structure coupled to the storage node contact.

An integrated circuit device may include a support pattern over a substrate, a lower electrode pattern and a dielectric structure over the substrate, and an upper electrode structure on the dielectric structure. The support pattern may include a first support structure extending in a vertical direction. The lower electrode pattern may be between the support pattern and the dielectric structure. The lower electrode pattern may include a first group of N (e.g., an integer of 4 or more) lower electrodes that are spaced apart from each other and may extend in the vertical direction to a first level above the substrate. The dielectric structure may include a first dielectric protrusion that extends in the vertical direction and surrounds the first support structure and the first group of N lower electrodes. The upper electrode structure may include a first upper electrode protrusion that surrounds the first dielectric protrusion.

Method of forming an integrated circuit device including a lower electrode on a sidewall of a support column extending vertical on a top surface of a substrate, a dielectric layer surrounding the support column and the lower electrode, and an upper electrode surrounding the dielectric layer

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Yongin-si, South Korea

Bong-Soo Kim