Seoul Semiconductor Co., Ltd.

Bong Ryeol Park

Young Do Jong

Jae Gil Lee

Ho Young Cha

June Sik Kwak

Kwan Hyun Lee

Exemplary embodiments of the present invention disclose a unidirectional heterojunction transistor including a channel layer made of a first nitride-based semiconductor having a first energy bandgap, a barrier layer made of a second nitride-based semiconductor having a second energy bandgap different from the first energy bandgap, the barrier layer including a recess, a drain electrode disposed on a first region of the barrier layer, and a recessed-drain Schottky electrode disposed in the recess of the barrier layer, the recessed-drain Schottky electrode contacting the drain electrode.

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Goyang-si, South Korea

Bong Ryeol Park