Samsung Electronics Co., Ltd.

Bong-Ryeol Lee

Jin-Hyeok Choi

A memory system includes a flash memory storing multi-bit data in one memory cell. A memory controller controls the flash memory to program the multi-bit data in the memory cell. The flash memory programs the multi-bit data in the memory cell in a single program operation.

Memory system including MLC flash memory

Provided are a memory system and a program method. The memory system includes a flash memory and a memory controller. The flash memory stores first bit data and then stores second bit data in a multi-level memory cell. The memory controller includes a buffer memory temporarily storing the first bit data and the second bit data, and a backup memory storing the first bit data while the flash memory is storing the second bit data. The backup memory re-programs the first bit data to the flash memory upon detecting a program failure associated with the storing the second bit data.

Memory system with backup circuit and programming method

A memory system includes a host, a flash memory that is configured to store multi-bit data in one memory cell, and a memory controller that is configured to control programming of multi-bit data provided by the host into the flash memory. When an nbit is normally programmed, and a fail occurs in programming an n+1th bit in the flash memory, a memory block of the flash memory including a fail cell is operated in an operation mode of the nth or lesser bit. Related memory systems and methods are also provided.

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Seoul, South Korea

Bong-Ryeol Lee