Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Dongwoo Fine-Chem Co., Ltd.

Techno Semichem Co., Ltd.

Bong-Kyun Kim

Jong-Hyun Choung

Hong-Sick Park

Sun-Young Hong

Byeong-Jin Lee

Byeong-Beom Kim

Won-Suk Shin

Nam-Seok Suh

Shi-Yul Kim

Shin-Il Choi

Pil-Sang Yun

Sam-Young Cho

Sang-woo Kim

Wang Woo Lee

Hong Sick Park

Jae-Hyoung Youn

Joo-Ae Youn

Ki-beom Lee

Yang-Ho Bae

Wang-Woo Lee

Chang-Oh Jeong

Do-Hyun Kim

Ki-Won Kim

Woo-Geun Lee

Shin Il Choi

Jean-Ho Song

Byung-Uk Kim

Dong-Ju Yang

Doo-Hee Jung

Hyun-Cheol Shin

Suk-Il Yoon

Jong-Hyun Jeong

Young Min Moon

Won-Guk Seo

Dong-Hoon Lee

Jang-Soo Kim

Yu-Gwang Jeong

Je-Hun Lee

Sang-Gab Kim

Youngjun Kim

Young-Wook Lee

Jong-in Kim

Sangwon Shin

Jong-In Kim

Sung-Ryul Kim

Seungho Yoon

Hwa-Yeul Oh

Hongsick Park

Young-Joo Choi

Ki-Yeup Lee

O-Sung Seo

Donghee Lee

Sang-Hoon Jang

Seungbo Shim

Je-Hyeong Park

Jinsuek Kim

Gyu-po Kim

Soon-Beom Huh

Hong-Long Ning

Pil-Soon Hong

Young-Min Moon

Hyun Sook Kim

Jeong-Min Park

Sung-Hoon Yang

Sang Gab Kim

Sang-Woo Kim

Ji Hun Kim

Seung-Ha Choi

Kap-Soo Yoon

Wan-Soon Im

Ho Kil Oh

Su Bin Bae

Seung-yong Lee

O Sung Seo

Jean Ho Song

Seung Bo Shim

Hyun-Jung Lee

Hwa Yeul Oh

Young-Chul Park

Yong-Hwan Ryu

Seon-Il Kim

Hyun-Kyu Lee

Dae Ho Kim

In-Bae Kim

Joon-Woo Lee

Young Joo Choi

Young-Jun Jin

Seung Ho Yoon

Sho Yeon Kim

Joon Hoo Choi

Yang Ho Bae

O-Byoung Kwon

Min-Ki Lim

Eung Gyu Lee

Dae-woo Lee

Ki Tae Kim

Won-guk Seo

Hyun-cheol Shin

Joo-Ae Yoon

Chang Woo Kwon

An etchant composition of an embodiment may etch a multi-layered film of titanium/copper and may include about 5 wt % to about 20 wt % of persulfate, about 0.1 wt % to about 5 wt % of phosphoric acid or phosphate, about 0.01 wt % to about 2 wt % of a carbonyl ring compound, about 0.01 wt % to about 1 wt % of a 3-nitrogen ring compound, about 0.1 wt % to about 2 wt % of a 4-nitrogen ring compound, about 0.1 wt % to about 0.9 wt % of a fluorine compound, about 0.1 wt % to about 0.5 wt % of hydrogen about 1 wt % to about 3 wt % of a zwitterionic compound, and sulfate, water which is included in an amount that makes the total weight of the entire composition about 100 wt %.

Etchant composition, and method for manufacturing metal pattern and thin film transistor substrate using the same

A display device includes: a first substrate; a plurality of metal layers on the first substrate and separated from each other; a buffer layer on the metal layer; a semiconductor layer on the buffer layer; a gate conductive layer on the semiconductor layer; a data conductive layer connected to the semiconductor layer; and a light-emitting element connected to the data conductive layer, wherein the metal layer includes a first portion partially overlapping the semiconductor layer in a third direction perpendicular to the surface of the first substrate, a second portion where the metal layer completely overlaps the semiconductor layer in the third direction, and a third portion where the metal layer does not overlap the semiconductor layer in the third direction.

Display device and manufacturing method thereof

An etchant composition of an embodiment includes a persulfate, a four-nitrogen ring compound, a two-chlorine compound, a fluorine compound and water, and has a weight ratio of the four-nitrogen ring compound and the two-chlorine compound of about 1:0.5 to about 1:4. The etchant composition may etch a multilayer metal substrate of titanium/copper and may be used for manufacturing a multilayer metal pattern and an array substrate having excellent properties of etched patterns.

Etchant composition and methods for manufacturing metal pattern and array substrate using the same

An etchant composition including a persulfate, a four-nitrogen ring compound, a carbonyl ring compound having two or more carbonyl groups, and water, and having a weight ratio of the four-nitrogen ring compound and the carbonyl ring compound of about 1:0.1 to about 1:2. The etchant composition may etch a multilayer of titanium/copper and may be used for manufacturing a metal pattern and an array substrate having excellent properties of an etched pattern.

Etchant composition, and method for manufacturing metal pattern and array substrate using the same

A substrate-treating apparatus includes a liquid-providing part, a first liquid-removing knife and a returning part. The liquid-providing part provides a first liquid chemical for cleaning a substrate that includes a metal pattern and a photoresist pattern on the metal pattern, and for removing an etchant that remains on the substrate. The first liquid-removing knife sprays a second liquid chemical in a direction inclined and opposite to a returning direction of the substrate, so as to remove the first liquid chemical, the first liquid chemical including a metal precipitate. The returning part returns the substrate from the liquid-providing part toward the first liquid-removing knife in the returning direction.

Substrate-treating apparatus and method for treating a substrate using the same

A touch screen panel and a method of manufacturing the same. The touch screen panel includes: a plurality of touch electrodes disposed in a touch area of a substrate, the touch electrodes configured to sense a touch; and a connecting wire connected with the touch electrode and having a pad connected to one end. The connecting wire includes a first wire layer made of a metal nano wire disposed on the substrate, a second wire layer made of a first transparent conductive material, a third wire layer disposed on an upper surface of the second pad and made of a second transparent conductive material, and a fourth wire layer made of aluminum (Al) disposed on the third pad.

Touch screen panel

A thin film transistor substrate includes a thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode. Each of the source electrode and the drain electrode includes a wire layer and a protective layer. The protective layer includes zinc oxide in an amount greater than about 70% by weight and less than about 85% by weight and indium oxide in an amount greater than about 15% by weight and less than about 30% by weight.

Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same

A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

Thin film transistor substrate

Thin film transistor substrate and method of fabricating the same

A thin film transistor array panel includes: a gate line on a substrate and including a gate electrode; a first gate insulating layer on the substrate and the gate line, the first gate insulting layer including a first portion adjacent to the gate line and a second portion overlapping the gate line and having a smaller thickness than that of the first portion; a second gate insulating layer on the first gate insulating layer; a semiconductor layer on the second gate insulating layer; a source electrode and a drain electrode spaced apart from each other on the semiconductor layer; a passivation layer on the second gate insulating layer, the source electrode and the drain electrode; and a pixel electrode on the passivation layer and connected with the drain electrode. The first gate insulating layer and the second gate insulating layer have stress in opposite directions from each other.

Method for manufacturing thin film transistor array panel

A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.

Thin film transistor substrate and the method thereof

A method for using a pen in an electronic device is provided, including: detecting a pen use event; and responsive to the pen use event, displaying, on a display of the electronic device, at least one virtual button which performs the same function as a physical button that is part of the electronic device; wherein the physical button of the electronic device comprises at least one of a mechanical switch and an optical switch.

Method and electronic device for displaying a virtual button

A liquid crystal display includes: a substrate; a gate line and a data line disposed on the substrate; a semiconductor layer disposed on the substrate; first and second field generating electrodes disposed on the substrate; and a first protecting layer formed from the same layer as the first field generating electrode and covering at least a portion of the data line.

Liquid crystal display

Growing community of inventors

Incheon, South Korea

Bong-Kyun Kim