Electronics and Telecommunications Research Institute

Bong Ki Mheen

Mi Jin Kim

Young Joo Song

Jae Sik Sim

Yong Hwan Kwon

Myoung Sook Oh

Min Hyup Song

Hong Seok Seo

Jung Ho Song

Eun Soo Nam

Ki Soo Kim

Seong Su Park

Min Hyung Cho

Gyu Dong Choi

Dong Sun Kim

Hong-Seok Seo

Chong Ki Kwon

Jin Yeong Kang

Mi Ran Park

Albert J P Theuwissen

A laser radar system includes a first light source unit including a signal light source&#x2014;a seed laser diode or a light source for amplifying a laser beam from the seed laser diode&#x2014;and a pump laser diode, a second light source unit disposed to be spaced apart from the first light source unit, the second light source unit including an optical amplifier for amplifying a signal output from the first light source unit, and an optical connector for connecting the first light source unit and the second light source unit to each other, wherein the second light source unit is disposed at an end of a laser transceiver unit of the laser radar system.

Laser radar system

Disclosed is a laser radar apparatus. The laser radar apparatus includes: a light transmission unit configured to output a laser pulse by using a light source; a light reception unit configured to receive a reflected laser pulse in connection with the laser pulse; and a controller configured to adjust a repetition rate of the laser pulse of the light source, in which the controller adjusts the repetition rate of the laser pulse based on at least one of reception power, a target distance, a movement speed, a vertical angle, and a radiation angle.

Laser radar apparatus and method of acquiring image thereof

Provided herein a laser radar apparatus including a plurality of light transmission and reception modules arranged concavely in an opposite direction to a scanning direction based on a surface vertical to the scanning direction, wherein each of the plurality of light transmission and reception modules comprises a transmitter configured to deflect a laser beam and to irradiate the deflected laser beam to a target; and a receiver configured to receive the laser beam reflected from the target.

Laser radar apparatus and method for operating thereof

Disclosed are a method and an apparatus for implementing an active imaging system. A method of obtaining an image in an active imaging system including: dividing an imaging region, and determining a plurality of divided imaging regions; scanning each of the plurality of divided imaging regions based on a laser; collecting reflected light for each of the plurality of divided imaging regions, and generating a plurality of divided images by an image sensor; and generating a whole image for the imaging region based on the plurality of divided images.

Method and apparauts for implementing active imaging system

A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.

Method of fabricating avalanche photodiode

Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.

Image sensor and method of driving transfer transistor of image sensor

An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.

Shared photodiode image sensor

Provided are an image sensor and a method of sensing the same. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device.

Low-voltage image sensor with sensing control unit formed within

Provided are a low-voltage image sensor and a method of driving a transfer transistor thereof, which are obtained by changing the structure and driving method of a typical transfer transistor of a 4-transistor CMOS transistor, and can eliminate the influence of a voltage or physical structure of a diffusion node on a reset or transfer operation of a photodiode. The image sensor includes a light receiving device for detecting light and a signal conversion unit for reading photocharge generated by the light receiving device to an external circuit. The signal conversion unit includes a transfer transistor including at least two gate electrodes. When the photocharge is transferred to a channel of a transfer gate electrode disposed closest to a photodiode, a transfer gate electrode disposed adjacent to a diffusion node remains turned off.

Low-voltage image sensor having multiple gates between a photodiode and a diffusion node for suppressing dark current and method of driving transfer transistor thereof

An image sensor operated in a pseudo pinch-off condition capable of reducing a reset voltage of a photodiode and reducing a dark current and fixed pattern noise generated due to discordance of characteristics between pixels is presented. The image sensor has a photosensitive pixel, a driving circuit and an intermediary circuit. The photosensitive pixel can have a photodiode generating a photoelectrons, a transfer transistor transferring the photoelectrons to a diffusion node, and a reset transistor resetting the diffusion node. The driving circuit generates a driving switching signal with respect to the transfer and resist transistors. The intermediary circuit changes characteristics of the signal to drive the photosensitive pixel in a pseudo pinch-off mode.

Image sensor for low-noise voltage operation

Provided is a low-reference-current generator that includes a circuit employing two feedback loops enabling it to operate even at a low voltage, has a high power supply rejection ratio (PSRR) to control power supply noise, and simply forms a voltage without a voltage-to-current converter used in a conventional general reference current generator. The reference current generator includes: a first voltage generator receiving a predetermined current and generating a first voltage that decreases as temperature increases; a second voltage generator generating a second voltage that increases as temperature increases; a first current generator generating a first current corresponding to the first voltage; a second current generator generating a second current corresponding to the second voltage; and a reference current generator receiving the first current and the second current and generating a reference current that is the sum of the first current and the second current.

Growing community of inventors

Daejeon, South Korea

Bong Ki Mheen