Will Technology Co., Ltd

Unitest Inc.

Lg Display Co., Ltd.

Bong Hwan Kim

Jong Bok Kim

Bum Jin Park

Kukjin Chun

Byung Hwee Park

Chi Hwan Jeong

Yu Cheol Kim

Yeong Seok Choe

Chi Woo Lee

Doo Yun Chung

The present disclosure relates to a power circuit and a display device including the same. The power circuit includes an output terminal configured to supply an output voltage to a digital circuit; a current sensing resistor connected to the output terminal; a sensing part configured to receive a first reference voltage and voltages of both ends of the current sensing resistor and vary one of a feedback voltage and a second reference voltage; and a voltage generation part configured to receive the feedback voltage and the second reference voltage and lowers the output voltage when a current flowing through the current sensing resistor decreases.

Power circuit and display device including the same

A disclosed display device capable of detecting bonding defects includes: a display panel having an active area used to display images and a pad area in which pads are formed; driver IC (Integrated Circuit) chip mounted on a pad region of the display panel; a flexible printed circuit board bonded to the pad region of the display panel; and a bonding resistance detection circuit disposed in the driver IC chip. The display panel includes: first and second bonding portions formed in a mounting region of the driver IC chip within the pad area of the display panel; and third and fourth bonding portions formed in a bonding region of the flexible printed circuit board within the pad area of the display panel. The first through fourth bonding portions are electrically connected to one another, and the first and second bonding portions are connected to the bonding resistance detection circuit.

Display device capable of detecting bonding defect

A method for forming a bump of a probe card is disclosed. In accordance with the method, a bump having a high aspect ratio for supporting a probe tip and a probe beam is formed using a semiconductor substrate as a mold eliminating a need for a photoresist film.

Method for forming bump of probe card

A method for manufacturing a probe structure of a probe card is disclosed. In accordance with the present invention, a portion of a substrate exposed through a crossing region of one more probe beam regions defined by a first mask layer pattern and a windows defined by a second mask layer pattern are etched to form one or more self-aligning probe tip regions, thereby preventing a misalignment of the one or more probe tip regions.

Method for manufacturing probe structure of probe card

A method for manufacturing a probe structure is disclosed. In accordance with the method, two semiconductor substrates having different crystal directions are bonded and selectively etched utilizing an etch selectivity due to the different crystal directions to form a probe tip region and a probe beam region. A cantilever structure for a probe card is formed by filling the probe tip region and the probe beam region with a conductive material.

Method for manufacturing probe structure

A method for manufacturing a cantilever structure of a probe card is disclosed. In accordance with the method of the present invention, a first sacrificial wafer is used as a mold to form a cantilever structure having various shapes, a microscopic pitch and a high aspect ratio. In accordance with the method of the present invention, a probe tip may be formed by using a second sacrificial substrate and a bonding.

Method for manufacturing cantilever structure of probe card

A method for manufacturing a bump of a probe card is disclosed. In accordance with the present invention, the bump has a high aspect ratio, a high elasticity, a high durability suitable for testing a high speed device. The bump is formed using a sacrificial substrate as a mold to have a shape of &#x3a0; or II for elasticity and durability.

Method for manufacturing bump of probe card

A method for manufacturing a probe structure of a probe card is disclosed. In accordance with the method of the present invention, a dual etching process of a silicon substrate or an etching process of an SOI substrates is carried out using a sidewall insulating film pattern as an etching mask to facilitate a formation of a bump and microscopic probe structure of the probe card.

The present invention relates to a probe card that a probe of the probe card is movable only in a vertical direction using a trench to improve a electrical or a mechanical characteristic and to automatically limit the vertical movement thereof within a predetermined range. A pitch may be reduced so as to correspond to a decreasing distance between pads. A flatness of a probe tip may be maintained within a few micrometers using a semiconductor manufacturing process. 32 simultaneous parallel testing is possible contrary to a convention probe card. A wafer level testing is possible, and time and cost for a wafer testing are reduced.

Growing community of inventors

Seoul, South Korea

Bong Hwan Kim