Samsung Electronics Co., Ltd.

Bon Won Koo

Sang Yoon Lee

Joo Young Kim

Jung Seok Hahn

Bang Lin Lee

Kook Min Han

Eun Kyung Lee

Jong Jin Park

Eun Jeong Jeong

Do Hwan Kim

Yi Yeol Lyu

Young Hun Byun

Ji Youl Lee

In Nam Kang

Jeong Il Park

Jung Han Shin

Hyun Sik Moon

Hye Yeon Yang

Joo-Young Kim

Jong Won Chung

Yong Wan Jin

Sang-Yoon Lee

Myung-Kwan Ryu

Joon Yong Park

Ji Young Jung

Tae Woo Lee

Hyun Jung Park

Myung Sup Jung

Kyoung Seok Son

Joo Hyung Kim

Myung-Sup Jung

Jong-Baek Seon

Kyung-Bae Park

Kyu Yeol In

In Seo Kee

Chang Ju Kim

Byong Gwon Song

Hwan Jae Choi

Byung Wook Yoo

In Koo Kang

Lyong Sun Pu

Eun Mi Seo

In Sung Song

Sung Ouk Jung

Kakimoto Masaaki

Seung Joo Seo

Sung Ouk 106/1101 Yungong1-Danji Apartment Jung

A thin film transistor panel includes a gate electrode on a substrate, a gate insulating layer on the gate electrode, an organic semiconductor overlapping with the gate electrode, a source electrode and a drain electrode electrically connected to the organic semiconductor, a fluorine-containing organic insulation layer covering the organic semiconductor, and a photosensitive organic insulation layer covering the fluorine-containing organic insulation layer.

Thin film transistor panel and method of manufacturing the same, and electronic device including the thin film transistor panel

An organic semiconductor polymer includes a moiety represented by the following Chemical Formula 1 and a heteroaromatic moiety having at least one of sulfur (S) and selenium (Se).  In the Chemical Formula 1, R, R, R, R, R, R, R, and R, a1, a2, b1, and b2 are the same as described in the detailed description.

Organic semiconductor polymer, organic thin film transistor, and electronic device

A display device according to example embodiments includes a first thin film transistor on a substrate, a second thin film transistor on the first thin film transistor, and a display unit electrically connected to at least one of the first thin film transistor and the second thin film transistor.

Display device including thin film transistor

According to example embodiments, an organic passivation layer composition includes a cross-linking agent and an oligomer or a polymer including structural units represented by the following Chemical Formulae 1 and 2:  In Chemical Formulae 1 and 2, each substituent is defined in the detailed description.

Organic passivation layer composition, transistor and/or electronic device including organic passivation layer fabricated therefrom

Disclosed herein is a functionalized metal nanoparticle, a buffer layer including the functionalized metal nanoparticle, and an electronic device including the buffer layer. The buffer layer including the functionalized metal nanoparticle according to example embodiments may improve the injection of electrons or holes and the charge mobility between layers in the electronic device, may form ohmic contacts, and may improve the selectivity between electrodes and the buffer layer at the time of forming the buffer layer on the electrodes, thereby improving the efficiency of the electronic device.

Functionalized metal nanoparticle, buffer layer including the same and electronic device including the buffer layer

Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

Methods for forming banks and organic thin film transistors comprising such banks

Methods of fabricating organic thin film transistors

Disclosed is an organic electronic device, in which a semiconductor layer and source/drain electrodes may be formed from materials of the same type, suitable for a room-temperature wet process, and thus have surface properties similar to each other, thereby decreasing contact resistance between the semiconductor layer and the source/drain electrodes. The materials for formation of the semiconductor layer and source/drain electrodes may be organic semiconductor type materials obtained by adding carbon-based nanoparticles to organic semiconductor materials in predetermined or given amounts. As such, the conductivity of a semiconductor or conductor may vary depending on the amount of carbon-based nanoparticles.

Organic electronic device

Disclosed are methods of fabricating organic thin film transistors composed of a substrate, a gate electrode, a gate insulating film, metal oxide source/drain electrodes, and an organic semiconductor layer. The methods include applying a sufficient quantity of a self-assembled monolayer compound containing a live ion to the surfaces of the metal oxide electrodes to form a self-assembled monolayer. The presence of the live ion at the interface between the metal oxide electrodes and the organic semiconductor layer modifies the relative work function of these materials. Further, the presence of the self-assembled monolayer on the gate insulating film tends to reduce hysteresis. Accordingly, organic thin film transistors fabricated in accord with the example embodiments tend to exhibit improved charge mobility, improved gate insulating film properties and decreased hysteresis associated with the organic insulator.

Methods of fabricating organic thin film transistors and organic thin film transistors fabricated using the same

A composition for preparing an organic insulator, the composition comprising (i) at least one organic-inorganic hybrid material; (ii) at least one organometallic compound and/or organic polymer; and (iii) at least one solvent for dissolving the above two components, so that an organic insulator using the same has a low threshold voltage and driving voltage, and high charge carrier mobility and I/Iratio, thereby enhancing insulator characteristics. Further, the preparation of organic insulating film can be carried out by wet process, so that simplification of the process and cut of cost are achieved.

Composition for preparing organic insulator

Disclosed are compositions for forming organic insulating films and methods for forming organic insulating films using one or more of the compositions. The compositions include at least one ultraviolet (UV) curing agent, at least one water-soluble polymer and at least one water-soluble fluorine compound, and the method includes applying the composition to a substrate to form a coating layer, irradiating the coating layer with UV light to form an exposed layer and developing the exposed layer with an aqueous developing solution to obtain an organic insulating film and/or pattern. Also disclosed are organic thin film transistors comprising an organic insulating film formed by one of the methods using one of the compositions that may exhibit improved hysteresis performance and/or acceptable surface properties without the need for additional processing, thereby simplifying the fabrication process.

Compositions for forming organic insulating films, methods for forming organic insulating films using the compositions and organic thin film transistors comprising an organic insulating film formed by such a method

An organic insulator composition comprising a high dielectric constant insulator dispersed in a hyperbranched polymer and an organic thin film transistor using the insulator composition. More specifically, the organic thin film transistor comprises a substrate, a gate electrode, a gate insulating layer, a source electrode, a drain electrode and an organic semiconductor layer wherein the gate insulating layer is made of the organic insulator composition. The use of the insulator composition in the formation of a gate insulating layer allows the gate insulating layer to be uniformly formed by spin coating at room temperature, as well as enables fabrication of an organic thin film transistor simultaneously satisfying the requirements of high charge carrier mobility and low threshold voltage.

Organic insulator composition comprising high dielectric constant insulator dispersed in hyperbranched polymer and organic thin film transistor using the same

Disclosed is a method for fabricating an organic thin film transistor by oxidation and selective reduction of an organic semiconductor material. According to the method, stability of interfaces between a semiconductor layer and source/drain electrodes of an organic thin film transistor may be guaranteed. Therefore, an organic thin film transistor fabricated by the method may exhibit improved performance characteristics, e.g., minimized or decreased contact resistance and increased charge carrier mobility.

Method for fabricating an organic thin film transistor by oxidation and selective reduction of organic semiconductor material

A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.

Method of fabricating thin film transistor

Growing community of inventors

Gyeoggi-do, South Korea

Bon Won Koo