Samsung Electronics Co., Ltd.

Sungkyunkwan University

Bokyoung Kim

Taehun Kim

Jinhwan Kim

Sungwon Ko

Wongoo Hur

Jongin Lee

Seunghwan Lee

Yongmin Kim

Deok Su Jo

Ho Kyoon Chung

Sung Min Cho

Subin Jung

Dae Kyoung Kim

Hee Yeop Chae

A memory system includes a memory controller configured to control a memory device and sub-buffer memory arranged outside the memory controller. The memory controller includes a processor configured to control a memory operation for the memory device, main buffer memory that is different from the sub-buffer memory and arranged in the memory controller, and a buffer allocation circuit configured to control an allocation ratio between the sub-buffer memory and the main buffer memory. The processor sets an operation mode of the buffer allocation circuit as an operation in which the allocation ratio is fixed.

Memory controller for controlling allocation ratio of buffer memory, memory system including the same, and method of operating memory controller

A semiconductor light emitting device includes a first electrode layer, a light emitting structure on the first electrode layer, a transparent electrode layer between the first electrode layer and the light emitting structure, an interlayer insulating layer between the transparent electrode layer and the first electrode layer, and having first and second openings, a second electrode layer between the first electrode layer and the interlayer insulating layer, and connected to the transparent electrode layer, and an electrode pad contacting the second electrode layer, each of the first openings and at least one of the second openings define one group to have at least first and second groups, the first group being closer to the electrode pad than the second group is, and a distance between the first and second openings in the first group being greater than a distance between the first and second openings in the second group.

Semiconductor light emitting device and light emitting device package having the same

A semiconductor light emitting device includes a substrate structure, first and second regions and a main region; a light emitting structure, first and second electrode layers, an interlayer insulating layer, and a pad electrode layer. The light emitting structure is provided on the third region. The first electrode layer is provided between the substrate structure and the light emitting structure, and has a first electrode extension that extends into the first region. The second electrode layer is provided between the first electrode layer and the light emitting structure, and has a second electrode extension that extends into the second region. The interlayer insulating layer is provided between the first and second electrode layers, and has an opening exposing a portion of the first electrode extension. The pad electrode layer is provided on the interlayer insulating layer, and is connected to the portion of the first electrode extension through the opening.

Semiconductor light emitting device and light emitting device package

The present disclosure relates to a large scale film containing quantum dots or a dye, a method of preparing the large scale film, including: forming quantum dots or a dye dispersed in a solvent in the form of fibers or beads; applying pressure to an adhesive film to make the fibers or the beads adhere thereto; and curing the adhesive film onto which the fibers or the beads have adhered, and fibers or beads of quantum dots or a dye which are prepared by electrospinning.

Large scale film containing quantum dots or dye, and production method therefor

Growing community of inventors

Suwon-si, South Korea

Bokyoung Kim