Skhynix Inc.

Bokmoon Kang

Youncheul Kim

Jeongsu Jeong

Igsoo Kwon

Gwangyoung Stanley Jeong

A memory device includes a non-volatile memory configured to store a repair data and output the repair data in response to an initialization signal, a plurality of registers configured to store the repair data outputted from the non-volatile memory, a plurality of memory banks configured to replace normal cells with redundant cells by using the repair data stored in corresponding registers among the plurality of registers, a verification circuit configured to generate a completion signal for informing that transfer of the repair data from the non-volatile memory to the plurality of registers is completed, and an output circuit configured to output the completion signal to a device other than the memory device.

Memory device, memory system including a non-volatile memory configured to output a repair data in response to an initialization signal

An integrated circuit includes an internal power line, a no-connection (NC) pad, and a switch configured to electrically connect the internal power line with the NC pad to supply a first external voltage to the internal power line through the NC pad in response to a control signal.

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San Jose, CA, United States of America

Bokmoon Kang