Asm IP Holding B.v.

BokHeon Kim

Michael Eugene Givens

David Kurt De Roest

Alexandros Demos

David Kohen

Zecheng Liu

Daniele Piumi

Tatiana Ivanova

Yoann Francis Tomczak

Ivan Zyulkov

Perttu Sippola

Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

Method of forming a photoresist underlayer and structure including same

An apparatus and a method for forming a 3-D NAND device are disclosed. The method of forming the 3-D NAND device may include forming a plug fill and a void. Advantages gained by the apparatus and method may include a lower cost, a higher throughput, little to no contamination of the device, little to no damage during etching steps, and structural integrity to ensure formation of a proper stack of oxide-nitride bilayers.

Apparatus and methods for plug fill deposition in 3-D NAND applications

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San Jose, CA, United States of America

BokHeon Kim