Lg Display Co., Ltd.

Samsung Electronics Co., Ltd.

Bok-Young Lee

Young-Wook Lee

Dong-Hyun Kim

Jeong-yun Lee

Jin-Kwon Park

Myeong-Cheol Kim

Jae-Young Oh

Chang-Hyun Song

Sung-Ki Kim

Dong-Woo Han

Cheol Kyu Kim

Sang-Hyun Lee

Do-hyoung Kim

Sung-woo Kang

Young-Mook Oh

Yeong-Jong Jeong

Ho-Young Jeong

In-Keun Lee

Dong-hoon Khang

Yoo-Jung Lee

Young-Jang Lee

Ji-Eun Han

Hak-yoon Ahn

Seong-han Oh

In-Hee Lee

Discussed is a display device including a substrate including a first region and a second region surrounding the first region, a plurality of first subpixels on the first region of the substrate, and a plurality of second subpixels on the second region of the substrate. The first region includes a transmission portion adjacent to the plurality of first subpixels. Each of the first and second subpixels includes a first electrode, a first common layer, an organic emission layer, a second common layer, and a second electrode stacked in order. The first and second common layers are located in succession in the first and second subpixels.

Display device including stepped section substrate with embedded camera

A display device is discussed, which has improved transmittance and relieves a visual difference in a camera region, even though a camera is provided in an active region, by changing the configuration of a substrate in a region corresponding to the camera.

Disclosed is an organic light-emitting display device having a touchscreen in which the configuration of a pad unit and a circuit board connected to the pad unit is simplified, resulting in bonding stability and an improved form factor of the device, and a method of manufacturing the same. In the organic light-emitting display device having the touchscreen in which a touch electrode is directly provided on an encapsulation layer, a touch pad and a display pad are disposed parallel to each other on the same side so as to be connected to a flexible printed circuit board with a difference in height therebetween. Thereby, increased bonding reliability and an increased effective display area are achieved.

Organic light-emitting display device having touchscreen and method of manufacturing the same

A semiconductor device includes an active region in a shape of a fin extending in a first direction, the fin having source/drain regions spaced apart therein, gate structures crossing the fin between the source/drain regions, each including a gate electrode, a first contact structure in electrical contact with a first source/drain region, the first contact structure including a first lower contact and a first upper contact directly thereon, a second contact structure in electrical contact with a gate electrode of a gate structure, the second contact structure including a second lower contact and a second upper contact directly thereon, and a third contact structure in electrical contact with a gate electrode of a second gate structure and in electrical contact with a second source drain region, the third contact structure including a third lower contact and a third upper contact directly thereon.

Semiconductor device and method of manufacturing the same

Provided are a semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a first active fin and a second active fin which protrude from a substrate and extend along a first direction, a first gate structure which is on the first active fin to extend along a second direction intersecting the first direction, a second gate structure which is located adjacent to the first gate structure in the second direction and is on the second active fin to extend along the second direction, and a dummy structure which is in a space between the first gate structure and the second gate structure.

Methods of fabricating FinFET semiconductor devices including dummy structures

A method includes forming a first etch target layer and a first mask layer on a substrate. Sacrificial patterns extending in a first direction are formed on the first mask layer in a second direction. Spacers are formed on sidewalls of the sacrificial patterns. After removing the sacrificial patterns, the first mask layer is etched using the spacers as an etching mask to form first masks. Second masks are formed on sidewalls of each first mask to define a third masks including each first mask and the second masks on sidewalls of each first mask. The first etch target layer is etched using the first and third masks as an etching mask to form first and second patterns in the first and second regions, respectively. Each first pattern has a first width, and each second pattern has a second width greater than the first width.

Method of forming minute patterns and method of manufacturing a semiconductor device using the same

Integrated circuit devices with source/drain regions including multiple segments and methods of forming the same are provided. The integrated circuit devices may include a gate structure on a substrate and a source/drain region in the substrate adjacent the gate structure. The source/drain region may include a sidewall including a plurality of curved sidewall sections.

Integrated circuit devices with source/drain regions including multiple segments

FinFET semiconductor devices including dummy structures

Disclosed is a thin film transistor and a method of fabricating the same which includes a light-shielding layer made of the same material as a semiconductor layer on a substrate, wherein the light-shielding layer absorbs light incident upon the semiconductor layer, thereby preventing deterioration in characteristics of the thin film transistor caused by exterior light.

Thin film transistor and method for fabricating the same

An array substrate includes a substrate; an oxide semiconductor layer on the substrate, the oxide semiconductor layer including an active area and source and drain areas at both sides of the active area; a gate insulating layer and a gate electrode sequentially on the active area of the oxide semiconductor layer; an inter insulating layer on the gate electrode and having first and second semiconductor contact holes that expose the source and drain areas respectively; and source and drain electrodes on the inter insulating layer and contacting the source and drain areas through the first and second semiconductor contact holes, respectively, wherein the first and second semiconductor contact holes are disposed in two regions.

Array substrate and method of fabricating the same

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Seoul, South Korea

Bok-Young Lee